參數(shù)資料
型號： TB5D1MDR
廠商： Texas Instruments, Inc.
英文描述： QUAD DIFFERENTIAL PECL DRIVERS
中文描述： 四路差分PECL驅(qū)動
文件頁數(shù)： 2/16頁
文件大?。?/td> 354K
代理商： TB5D1MDR
www.ti.com
PACKAGE DISSIPATION RATINGS
THERMAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted
(1)
TB5D1M, TB5D2H
SLLS579B–SEPTEMBER 2003–REVISED MAY 2004
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
PART NUMBER
TB5D1MDW
TB5D1MD
TB5D2HDW
TB5D2HD
TB5D1MLDW
TB5D1MLD
TB5D2HLDW
TB5D2HLD
PART MARKING
TB5D1M
TB5D1M
TB5D2H
TB5D2H
TB5D1ML
TB5D1ML
TB5D2HL
TB5D2HL
PACKAGE
Gull-wing SOIC
SOIC
Gull-wing SOIC
SOIC
Gull-wing SOIC
SOIC
Gull-wing SOIC
SOIC
LEAD FINISH
NiPdAu
NiPdAu
NiPdAu
NiPdAu
SnPb
SnPb
SnPb
SnPb
STATUS
Production
Production
Production
Production
Production
Production
Production
Production
CIRCUIT
BOARD
MODEL
Low-K
(2)
High-K
(3)
Low-K
(2)
High-K
(3)
T
≤
25
°
C
POWER
RATING
754 mW
1166 mW
816 mW
1206 mW
THERMAL RESISTANCE,
JUNCTION-TO-AMBIENT
WITH NO AIR FLOW
132.6
°
C/W
85.8
°
C/W
122.5
°
C/W
82.9
°
C/W
DERATING FACTOR
(1)
ABOVE T
A
= 25
°
C
T
A
= 85
°
C POWER
RATING
PACKAGE
7.54 mW/
°
C
11.7 mW/
°
C
8.17 mW/
°
C
12.1 mW/
°
C
301 mW
466 mW
326 mW
482 mW
D
DW
(1)
(2)
(3)
This is the inverse of the junction-to-ambient thermal resistance when board-mounted with no air flow.
In accordance with the low-K thermal metric definitions of EIA/JESD51-3.
In accordance with the high-K thermal metric definitions of EIA/JESD51-7.
PARAMETER
PACKAGE
D
DW
D
DW
VALUE
51.4
56.6
45.7
49.2
UNITS
°
C/W
°
C/W
°
C/W
°
C/W
θ
JB
Junction-to-board thermal resistance
θ
JC
Junction-to-case thermal resistance
TB5D1M, TB5D2H
0 V to 6 V
- 0.3 V to (V
CC
+ 0.3 V)
±
3 kV
±
2 kV
See Dissipation Rating Table
-65
°
C to 130
°
C
130
°
C
-80 V to 100 V
-100 V to 100 V
Supply voltage, V
CC
Input voltage
Human Body Model
(2)
Charged-Device Model
(3)
All Pins
All Pins
ESD
Continuous power dissipation
Storage temperature, T
stg
Junction temperature, T
J
D Package
DW Package
Lightning surge, TB5D1M only, see Figure 6
(1)
Stresses beyond those listed under
absolute maximum ratings
may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under
recommended operating
conditions
is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Tested in accordance with JEDEC Standard 22, Test Method A114-A.
Tested in accordance with JEDEC Standard 22, Test Method C101.
(2)
(3)
2
相關(guān)PDF資料
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TB5D1MDRE4 功能描述:LVDS 接口集成電路 5V QUAD PECL DRIVER RoHS:否 制造商:Texas Instruments 激勵器數(shù)量:4 接收機數(shù)量:4 數(shù)據(jù)速率:155.5 Mbps 工作電源電壓:5 V 最大功率耗散:1025 mW 最大工作溫度:+ 85 C 封裝 / 箱體:SOIC-16 Narrow 封裝:Reel
TB5D1MDW 功能描述:LVDS 接口集成電路 5V QUAD PECL DRIVER RoHS:否 制造商:Texas Instruments 激勵器數(shù)量:4 接收機數(shù)量:4 數(shù)據(jù)速率:155.5 Mbps 工作電源電壓:5 V 最大功率耗散:1025 mW 最大工作溫度:+ 85 C 封裝 / 箱體:SOIC-16 Narrow 封裝:Reel
TB5D1MDWE4 功能描述:LVDS 接口集成電路 5V QUAD PECL DRIVER RoHS:否 制造商:Texas Instruments 激勵器數(shù)量:4 接收機數(shù)量:4 數(shù)據(jù)速率:155.5 Mbps 工作電源電壓:5 V 最大功率耗散:1025 mW 最大工作溫度:+ 85 C 封裝 / 箱體:SOIC-16 Narrow 封裝:Reel
TB5D1MDWR 功能描述:LVDS 接口集成電路 5V QUAD PECL DRIVER RoHS:否 制造商:Texas Instruments 激勵器數(shù)量:4 接收機數(shù)量:4 數(shù)據(jù)速率:155.5 Mbps 工作電源電壓:5 V 最大功率耗散:1025 mW 最大工作溫度:+ 85 C 封裝 / 箱體:SOIC-16 Narrow 封裝:Reel
TB5D1MDWRE4 功能描述:LVDS 接口集成電路 5V QUAD PECL DRIVER RoHS:否 制造商:Texas Instruments 激勵器數(shù)量:4 接收機數(shù)量:4 數(shù)據(jù)速率:155.5 Mbps 工作電源電壓:5 V 最大功率耗散:1025 mW 最大工作溫度:+ 85 C 封裝 / 箱體:SOIC-16 Narrow 封裝:Reel
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