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參數(shù)資料
| 型號： | TB2600M |
| 廠商： | Diodes Inc. |
| 英文描述： | 50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| 中文描述： | 50A條的雙向表面貼裝晶閘管浪涌保護(hù)器 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 187K |
| 代理商： | TB2600M |
DS30361 Rev. 2 - 1
2 of 4
TB0640M - TB3500M
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
Part Number
Rated
Repetitive
Off-State
Voltage
Off-State
Leakage
Current @
V
DRM
Breakover
Voltage
On-State
Voltage
@ I
T
= 1A
Breakover
Current
I
BO
Holding Current
I
H
Off-State
Capacitance
Marking Code
V
DRM
(V)
I
DRM
(uA)
V
BO
(V)
V
T
(V)
Min
(mA)
50
50
50
50
50
50
50
50
50
50
50
Max
(mA)
800
800
800
800
800
800
800
800
800
800
800
Min
(mA)
150
150
150
150
150
150
150
150
150
150
150
Max (mA)
C
O
(pF)
TB0640M
TB0720M
TB0900M
TB1100M
TB1300M
TB1500M
TB1800M
TB2300M
TB2600M
TB3100M
TB3500M
58
65
75
90
120
140
160
190
220
275
320
5
5
5
5
5
5
5
5
5
5
5
77
88
98
130
160
180
220
265
300
350
400
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
800
800
800
800
800
800
800
800
800
800
800
140
140
140
90
90
90
90
60
60
60
60
T064M
T072M
T090M
T110M
T130M
T150M
T180M
T230M
T260M
T310M
T350M
Symbol
V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
I
H
V
T
I
PP
C
O
Parameter
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current NOTE: 1
On state voltage
Peak pulse current
Off-state capacitance NOTE: 2
Notes:
recovery time does not exceed 30ms.
2. Off-state capacitance measured at f = 1.0MHz, 1.0V
RMS
signal, V
R
= 2V
DC
bias.
1. I
H
> (V
L
/R
L
) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
I
BO
V
BR
V
DRM
V
T
V
BO
I
H
I
V
I
BR
I
DRM
I
PP
C
U
D
O
R
P
W
E
N
UNDER DEVELOPMENT
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