參數(shù)資料
型號(hào): TB1245N
廠商: Toshiba Corporation
英文描述: TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC
中文描述: 東芝雙CMOS集成電路硅單片
文件頁(yè)數(shù): 8/101頁(yè)
文件大?。?/td> 1073K
代理商: TB1245N
TB1245N
2001-07-26
8
PIN
No.
PIN NAME
FUNCTION
INTERFACE CIRCUIT
INPUT / OUTPUT
SIGNAL
35
36
R-Y Output
B-Y Output
Output terminal of demodulated R-Y
or B-Y signal. There is an LPF for
removing carrier built in this pin.
DC
1.9 V
AC
B-Y : 650 mV
p-p
R-Y : 510 mV
p-p
(with input of PAL-75%
color bar signal)
37 Y
1
Output
Output terminal of processed Y
signal. Standard output level : 0.7
V
p-p
38 Fsc V
DD
V
DD
terminal of DDS block. Insert a
decoupling capacitor between this
pin and pin 32 (Fsc GND) at the
shortest distance from both. If
decouping capacitor is inserted at a
distance from the pins, it may cause
spurious deterioration.
39 Black Stretch
To connect filter for controlling black
expansion gain of the black
expansion circuit. Black expansion
gain is determined by voltage of this
pin.
DC
1.6 V
40 16.2 MHz X’tal
To connect 16.2 MHz crystal clock
for generating sub-carrier.Lowest
resonance frequency (f
0
) of the
crystal oscillation can be varied by
changing DC capacity. Adjust f
0
of
the oscillation frequency with the
board pattern.
DC
4.1 V
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