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參數(shù)資料
| 型號(hào)： | TB0720M-13 |
| 廠商： | DIODES INC |
| 元件分類(lèi)： | 浪涌電流限制器 |
| 英文描述： | 50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| 中文描述： | 30 A, SILICON SURGE PROTECTOR |
| 封裝： | PLASTIC, SMB, 2 PIN |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 187K |
| 代理商： | TB0720M-13 |
DS30361 Rev. 2 - 1
3 of 4
TB0640M - TB3500M
0.9
T , JUNCTION TEMPERATURE (°C)
J
Fig. 2 Relative Variation of Breakdown Voltage
vs. Junction Temperature
V
= (T )
BR
J
V
= (T = 25°C)
BR
J
0.95
1
1.05
1.1
1.15
1.2
-50
-25
0
25
50
75
100 125 150 175
NORMALIZED BREAKDOWN VOLTAGE
1
1.05
0.95
-50
NORMALIZED BREAKDOWN VOLTAGE
T , JUNCTION TEMPERATURE (oC)
J
Fig. 3 Relative Variation of Breakover Voltage
vs. Junction Temperature
1.1
-25
0
75
50
25
125
100
175
150
V
= (T )
BO
J
V
= (T = 25°C)
BO
J
1
10
100
1
1.5
3
2.5
2
4
3.5
5
4.5
I , ON-STATE CURRENT (A)
T
V , ON-STATE VOLTAGE (V)
T
Fig. 4 On-State Current vs. On-State Voltage
T = 25°C
j
I
, OFF-STATE CURRENT (uA)
(DRM)
T , JUNCTION TEMPERATURE (°C)
J
Fig. 1 Off-State Current vs. Junction Temperature
0.001
0.01
1
0.1
10
100
-25
0
25
50
75
100
125
150
V
= 50V
DRM
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.4
1.3
1.2
-50
-25
0
25
50
100
75
125
NORMALIZED HOLDING CURRENT
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 Relative Variation of Holding Current vs.
Junction Temperature
I = (T )
H
J
I
= (T = 25°C)
H
J
0.1
1
1
10
100
NORMALIZED CAPACITANCE
V , REVERSE VOLTAGE (V)
R
Fig. 6 Relative Variation of Junction Capacitance
vs. Reverse Voltage Bias
C = (V )
O
R
C
= (V = 1V)
O
R
T = 25°C
j
f = 1 Mhz
V
RMS
= 1V
C
U
D
O
R
P
W
E
N
UNDER DEVELOPMENT
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| TB0720M-13-F | 功能描述:硅對(duì)稱(chēng)二端開(kāi)關(guān)元件 65V 50A RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
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