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參數(shù)資料
| 型號(hào)： | TB0640M |
| 廠商： | Diodes Inc. |
| 英文描述： | 50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| 中文描述： | 50A條的雙向表面貼裝晶閘管浪涌保護(hù)器 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 187K |
| 代理商： | TB0640M |
DS30361 Rev. 2 - 1
2 of 4
TB0640M - TB3500M
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
Part Number
Rated
Repetitive
Off-State
Voltage
Off-State
Leakage
Current @
V
DRM
Breakover
Voltage
On-State
Voltage
@ I
T
= 1A
Breakover
Current
I
BO
Holding Current
I
H
Off-State
Capacitance
Marking Code
V
DRM
(V)
I
DRM
(uA)
V
BO
(V)
V
T
(V)
Min
(mA)
50
50
50
50
50
50
50
50
50
50
50
Max
(mA)
800
800
800
800
800
800
800
800
800
800
800
Min
(mA)
150
150
150
150
150
150
150
150
150
150
150
Max (mA)
C
O
(pF)
TB0640M
TB0720M
TB0900M
TB1100M
TB1300M
TB1500M
TB1800M
TB2300M
TB2600M
TB3100M
TB3500M
58
65
75
90
120
140
160
190
220
275
320
5
5
5
5
5
5
5
5
5
5
5
77
88
98
130
160
180
220
265
300
350
400
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
800
800
800
800
800
800
800
800
800
800
800
140
140
140
90
90
90
90
60
60
60
60
T064M
T072M
T090M
T110M
T130M
T150M
T180M
T230M
T260M
T310M
T350M
Symbol
V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
I
H
V
T
I
PP
C
O
Parameter
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current NOTE: 1
On state voltage
Peak pulse current
Off-state capacitance NOTE: 2
Notes:
recovery time does not exceed 30ms.
2. Off-state capacitance measured at f = 1.0MHz, 1.0V
RMS
signal, V
R
= 2V
DC
bias.
1. I
H
> (V
L
/R
L
) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
I
BO
V
BR
V
DRM
V
T
V
BO
I
H
I
V
I
BR
I
DRM
I
PP
C
U
D
O
R
P
W
E
N
UNDER DEVELOPMENT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TB0900M | 50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| TB1300M | 50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| TB1500M | 50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| TB1800M | 50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| TB0900M-13 | 50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TB0640M_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE |
| TB0640M_10 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:50A BIDIRECTIONAL SURFACE MOUNT THYRISTOR DUAL NPN TRANSISTOR |
| TB0640M-13 | 功能描述:硅對(duì)稱二端開關(guān)元件 50A 58V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TB0640M-13-F | 功能描述:硅對(duì)稱二端開關(guān)元件 50A 58V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TB0645A | 制造商:TAI-SAW 制造商全稱:TAI-SAW 功能描述:SAW IF Filter 36.125MHz for Digital Cable TV |
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