參數(shù)資料
型號: TB0640H-13
廠商: DIODES INC
元件分類: 浪涌電流限制器
英文描述: 100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
中文描述: 50 A, SILICON SURGE PROTECTOR
封裝: PLASTIC, SMB, 2 PIN
文件頁數(shù): 3/4頁
文件大小: 184K
代理商: TB0640H-13
DS30360 Rev. 3 - 2
3 of 4
TB0640H - TB3500H
0.9
T , JUNCTION
J
TEMPERATURE (°C)
Fig. 2 Relative Variation of Breakdown Voltage
vs. Junction Temperature
V
= (T )
BR
J
V
= (T = 25°C)
BR
J
0.95
1
1.05
1.1
1.15
1.2
-50
-25
0
25
50
75
100 125 150 175
NORMALIZED BREAKDOWN VOLTAGE
1
1.05
0.95
-50
NORMALIZED BREAKOVER VOLTAGE
T , JUNCTION TEMPERATURE (oC)
J
Fig. 3 Relative Variation of Breakover Voltage
vs. Junction Temperature
1.1
-25
0
75
50
25
125
100
175
150
V
= (T )
BO
J
V
= (T = 25°C)
BO
J
1
10
100
1
1.5
3
2.5
2
4
3.5
5
4.5
I , ON-STATE CURRENT (A)
T
V , ON-STATE VOLTAGE (V)
T
Fig. 4 On-State Current vs. On-State Voltage
T = 25°C
j
I
, OFF-STATE CURRENT (uA)
(DRM)
T , JUNCTION TEMPERATURE (°C)
J
Fig. 1 Off-State Current vs. Junction Temperature
0.001
0.01
1
0.1
10
100
-25
0
25
50
75
100
125
150
V
= 50V
DRM
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.4
1.3
1.2
-50
-25
0
25
50
100
75
125
NORMALIZED HOLDING CURRENT
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 Relative Variation of Holding Current vs.
Junction Temperature
I = (T )
H
J
I
= (T = 25°C)
H
J
0.1
1
1
10
100
NORMALIZED CAPACITANCE
V , REVERSE VOLTAGE (V)
R
Fig. 6 Relative Variation of Normalized Capacitance
vs. Reverse Voltage Bias
C = (V )
O
R
C
= (V = 1V)
O
R
T = 25°C
j
f = 1 Mhz
V
RMS
= 1V
C
U
D
O
R
P
W
E
N
相關PDF資料
PDF描述
TB0720H-13 100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
TB1300H 100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
TB1500H 100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
TB1800H 100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
TB0900H-13 100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
相關代理商/技術參數(shù)
參數(shù)描述
TB0640H-13-F 功能描述:硅對稱二端開關元件 58V 100A RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
TB0640L 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:30A BIDIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
TB0640L_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:30A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
TB0640L_10 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:30A BIDIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
TB0640L-13 功能描述:硅對稱二端開關元件 30A 58V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復通態(tài)電流: 額定重復關閉狀態(tài)電壓 VDRM:25 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA