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參數(shù)資料
| 型號(hào)： | TAS5186DKDR |
| 廠(chǎng)商： | Texas Instruments, Inc. |
| 英文描述： | 6-Channel, 210-W, Digital-Amplifier Power Stage |
| 中文描述： | 6通道，210鎢，數(shù)字放大器功率級(jí) |
| 文件頁(yè)數(shù)： | 8/17頁(yè) |
| 文件大?。?/td> | 349K |
| 代理商： | TAS5186DKDR |
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ELECTRICAL CHARACTERISTICS
F
PWM
= 384 kHz, GVDD = 12 V, VDD = 12 V, T
C
(case temperature) = 25
°
C, unless otherwise noted. All performance is in
accordance with recommended operating conditions, unless otherwise specified.
TAS5186
SLES136–MAY 2005
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
INTERNAL VOLTAGE REGULATOR AND CURRENT CONSUMPTION
VREG
Voltage regulator, only used as reference node
VDD = 12 V
3
3.3
3.6
V
Operating, 50% duty cycle
7
20
IVDD
VDD supply current
mA
Idle, reset mode
6
16
50% duty cycle
5
22
IGVDD_X
Gate supply current per half-bridge
mA
Idle, reset mode
1
3
50% duty cycle, without output filter or load, 5.1
mode
180
IPVDD_X
Half-bridge idle current
mA
50% duty cycle, without output filter or load, 2.1
mode
100
OUTPUT STAGE MOSFETs
R
DSon
, LS Sat
R
DSon
, HS Sat
R
Dson
, LS Sub
R
Dson
, HS Sub
I/O PROTECTION
Drain-to-source resistance, low side, satellite
T
J
= 25°C, includes metallization resistance
T
J
= 25°C, includes metallization resistance
T
J
= 25°C, includes metallization resistance
T
J
= 25°C, includes metallization resistance
210
m
m
m
m
Drain-to-source resistance, high side, satellite
210
Drain-to-source resistance, low side, subwoofer
110
Drain-to-source resistance, high side, subwoofer
110
V
UVP, G
V
UVP, hyst(1)
OTW
(1)
Undervoltage protection limit GVDD_X
10
V
Undervoltage protection hysteresis
250
mV
Overtemperature warning
125
°C
Temperature drop needed below OTW temp. for
OTW to be inactive after the OTW event
OTW
hyst(1)
25
°C
OTE
(1)
Overtemperature error
155
°C
Temperature drop needed below OTE temp. for SD
to be released after the OTE event
OTE
HYST(1)
25
°C
OLCP
Overload protection counter
1.25
ms
Resistor programmable, high end,
Rocp = 15 k
Resistor programmable, high end,
Rocp = 15 k
Overcurrent limit protection, sat.
5
A
I
OC
Overcurrent limit protection, sub.
8
A
I
OCT
Rocp
Overcurrent response time
210
ns
OC programming resistor range
Resistor tolerance = 5%
15
k
STATIC DIGITAL SPECIFICATION
V
IH
V
IL
I
LEAK
OTW/SHUTDOWN (SD)
High-level input voltage
2
PWM_X, M1, M2, M3, RESET
V
Low-level input voltage
0.8
Input leakage current
Static condition
–80
80
μ
A
Internal pullup resistor to DREG (3.3 V) for SD and
OTW
R
INT_PU
26
k
Internal pullup resistor only
3
3.3
3.6
V
OH
High-level output voltage
External pullup: 4.7-k
resistor to 5 V
I
O
= 4 mA
No external pullup
4.5
5
V
V
OL
FANOUT
Low-level output voltage
0.2
0.4
Device fanout OTW, SD
30
Devices
(1)
Specified by design.
8
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|---|---|
| TAS5261 | 制造商:TI 制造商全稱(chēng):Texas Instruments 功能描述:315-W Mono BTL Digital Amplifier Power Stage |
| TAS5261DKD | 功能描述:音頻放大器 315-W Mono BTL Digital Power Stage RoHS:否 制造商:STMicroelectronics 產(chǎn)品:General Purpose Audio Amplifiers 輸出類(lèi)型:Digital 輸出功率: THD + 噪聲: 工作電源電壓:3.3 V 電源電流: 最大功率耗散: 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TQFP-64 封裝:Reel |
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