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參數(shù)資料
| 型號： | TA8207K |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic |
| 中文描述： | 東芝雙極線性集成電路硅單片 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 903K |
| 代理商： | TA8207K |
TA8207K
2002-10-30
2
Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Supply voltage
V
CC
20
V
Output current (peak / CH)
I
O (peak)
2.5
A
Power dissipation
P
D
12.5
W
Operating temperature
T
opr
20~75
°C
Storage temperature
T
stg
55~150
°C
Electrical Characteristics
(unless otherwise specified, V
CC
= 9V, R
L
= 4
, R
g
= 600
, f =
1
kHz,
Ta = 25
°
C, R
f
=
1
20
)
Characteristic
Symbol
Test
Cir
cuit
Test Condition
Min.
Typ.
Max.
Unit
Quiescent current
I
CCQ
—
V
IN
= 0
—
21
45
mA
P
OUT (1)
—
THD = 10%
2.0
2.5
—
Output power
P
OUT (2)
—
THD = 10%, V
CC
= 12V
—
4.6
—
W
Total harmonic
distortion
THD
—
P
OUT
= 0.4W / ch
—
0.2
1.0
%
G
V (1)
—
R
f
= 120
,
V
OUT
= 0.775V
rms
(0 dBm)
43
45
47
Voltage gain
G
V (2)
—
R
f
= 0,
V
OUT
= 0.775V
rms
(0 dBm)
—
56.5
—
dB
Input resistance
R
IN
—
—
—
30
—
k
Output noise voltage
V
NO
—
R
g
= 10k
,
BW = 20Hz~20kHz
—
0.3
1.0
mV
rms
Ripple rejection ratio
R.R.
—
R
g
= 600
, f
ripple
= 100Hz
—
52
—
dB
Cross talk
C.T.
—
R
g
= 600
,
アンプ
1
2,
V
o
= 0.775V
rms
(0 dBm),
f = 1kHz
—
50
—
dB
Input offset voltage
V6, V7
—
—
—
30
60
mV
Stand by current
I
OFF
—
SW
1
→
off
—
1
—
μA
Typical DC Voltage Of Each Terminal
(V
CC
= 9V, Ta = 25°C)
Terminal no.
1
2
3
4
5
6
7
8
9
10
11
12
DC voltage
8.7
4.5
V
CC
5.0
0.7
0.03
0.03
0.7
GND
4.5
8.7
V
CC
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