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參數(shù)資料
| 型號： | T90RIA80 |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 晶閘管 |
| 英文描述： | 141 A, 800 V, SCR |
| 封裝： | ROHS COMPLIANT, D-55, T-MODULE-3 |
| 文件頁數(shù)： | 7/13頁 |
| 文件大小： | 251K |
| 代理商： | T90RIA80 |
Document Number: 93756
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 03-Jun-08
3
T..RIA Series
Medium Power Phase Control Thyristors
(Power Modules), 50 A/70 A/90 A
Vishay High Power Products
Note
(1) Available with dV/dt = 1000 V/s, to complete code add S90 i.e. T90RIA80S90
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum
15
mA
RMS isolation voltage
VISOL
50 Hz, circuit to base, all terminals shorted, TJ = 25 °C, t = 1 s
3500
V
Critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum, linear to 80 % rated VDRM (1)
500
V/s
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
T50RIA T70RIA T90RIA
UNITS
Maximum peak gate power
PGM
TJ = TJ maximum, tp ≤ 5 ms
10
12
W
Maximum average
gate power
PG(AV)
TJ = TJ maximum, f = 50 Hz
2.5
3
Maximum peak gate current
IGM
TJ = TJ maximum, tp ≤ 5 ms
2.5
3
A
Maximum peak
negative gate voltage
-VGT
10
V
Maximum required
DC gate voltage to trigger
VGT
TJ = - 40 °C
Anode supply = 6 V,
resistive load; Ra = 1
Ω
4.0
V
TJ = 25 °C
2.5
TJ = TJ maximum
1.5
Maximum required
DC gate current to trigger
IGT
TJ = - 40 °C
250
270
mA
TJ = 25 °C
100
120
TJ = TJ maximum
50
60
Maximum gate voltage
that will not trigger
VGD
TJ = TJ maximum, rated VDRM applied
0.2
V
Maximum gate current
that will not trigger
IGD
5.0
6.0
mA
Maximum rate of rise of
turned-on current
dI/dt
VD = 0.67 rated VDRM, ITM = 2 x rated dI/dt
Ig = 400 mA for T50RIA and Ig = 500 mA for T70RIA/T90RIA;
tr < 0.5 s, tp ≥ 6 s
For repetitive value use 40 % non-repetitive
Per JEDEC STD. RS397, 5.2.2.6
200
A/s
180
160
150
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