參數(shù)資料
型號: T436416D-7SG
廠商: TM Technology, Inc.
英文描述: 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
中文描述: 4米× 16 SDRAM的100萬x 16Bit的X 4Banks同步DRAM
文件頁數(shù): 23/73頁
文件大?。?/td> 734K
代理商: T436416D-7SG
TE
CH
tm
Figure 4. Power on Sequence and Auto Refresh (CBR)
T436416D
TM Technology Inc. reserves the right
P. 23
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
T0
T 1 T2
T3
T4
T5
T6
T7
T8
T9
T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS#
RAS#
CAS#
WE#
BA0,1
A10
A0-A9,A11
DQM
DQ
t
CK2
High level
is reauired
Minimum of 2 Refresh Cycles are required
Hi-Z
t
RP
t
RC
Address Key
Inputs must be
stable for 200
μ
s
PCommand
1stCommand
2ndCommand
Mode Register
CoAny
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