參數(shù)資料
型號: T436416C-6SG
廠商: TM Technology, Inc.
英文描述: 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
中文描述: 4米× 16 SDRAM的100萬x 16Bit的X 4Banks同步DRAM
文件頁數(shù): 19/28頁
文件大?。?/td> 651K
代理商: T436416C-6SG
TE
CH
tm
Page Write cycle at Different Bank @ Burst Length = 4
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T436416C
TM Technology Inc. reserves the right
P.19
to change products or specifications without notice.
Publication Date: AUG. 2004
Revision: A
CLO CK
C K E
CS
R A S
C A S
A D D R
A 13,A 12
A 10/A P
D Q
W E
D Q M
6
7
8
9
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H IG H
:D on't care
R ow Active
(A -B ank)
W rite (A-
B ank)
R ow Active
(B -B ank)
W rite (B -
B ank)
W rite (A-
B ank)
W rite (B -
B ank)
Precharge
(A -B ank)
*N o te1
*N o te2
t
CD L
t
RD L
RAa
CAa
RBb
CBb
CAc
CBd
RAa
RBb
D A a0
D A a1
D A a2
D A a3
D B b0
D B b1
D B b2
D B b3
D A c0
D A c1
D B d0
D B d1
*Note : 1. To interrupt burst write by row precharge, DQM should be asserted to mask invalid input data.
2. To interrupt burst write by row precharge, both the write and the precharge banks must be the same.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
T436416C-7S 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416C-7SG 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-5C 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-5CG 制造商:TMT 制造商全稱:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM