參數(shù)資料
型號: T431616C-7SG
廠商: TM Technology, Inc.
英文描述: 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
中文描述: 100萬× 16內(nèi)存為512k × 16Bit的X 2Banks同步DRAM
文件頁數(shù): 26/30頁
文件大?。?/td> 720K
代理商: T431616C-7SG
TE
CH
tm
Burst Read Single bit Write Cycle @ Burst Length = 2
0
1
2
3
4
T431616C
TM Technology Inc. reserves the right
P.26
to change products or specifications without notice.
Publication Date: AUG. 2004
Revision: A
C L O C K
C K E
C S
R A S
C A S
A D D R
B A
A 1 0 /A P
C L = 2
C L = 3
W E
5
6
7
8
9
1 0
1 1
1 2
1 3
1 4
1 5
1 6
1 7
1 8
1 9
H IG H
D Q M
D Q
:D o n 't c a re
* N o te2
R A a
C A a
R B b
C A b
R A c
C B c
C A d
R A a
R B b
R A c
D A a0
D A a0
D A b 0
D A b 0
D A b 1
D A b 1
D B c0
D B c0
D A d 0
D A d 1
D A d 0
D A d 1
R o w A c tiv e
(A -B a n k )
W rite (A -
B an k )
R o w A c tiv e
(A -B a n k )
R ead w ith A u to
P rech arg e (A -
B an k )
R o w A c tiv e
(A -B a n k )
W rite w ith A u to
P rech arg e (A -
B an k )
R ead (A -
B an k )
P rech arg e
(A -B a n k )
*Note : 1. BRSW modes is enabled by setting A
9
‘High’ at MRS (Mode Register Set).
At the BRSW Mode, the burst length at write is fixed to ‘1’ regardless of programmed burst length.
2. When BRSW write command with auto precharge is executed, keep it in mind that
t
RAS
should not
be violated.
Auto precharge is executed at the next cycle of burst-end, so in the case of BRSW write command,
the precharge command will be issued after two clock cycle.
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T431616D 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-5C 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
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相關代理商/技術參數(shù)
參數(shù)描述
T431616D 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-5C 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-5CG 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-5S 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-5SG 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM