- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361343 > T4312816A-8S (TM Technology, Inc.) 8M x 16 SDRAM PDF資料下載
參數(shù)資料
| 型號： | T4312816A-8S |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 8M x 16 SDRAM |
| 中文描述： | 8米× 16內(nèi)存 |
| 文件頁數(shù)： | 11/29頁 |
| 文件大?。?/td> | 711K |
| 代理商： | T4312816A-8S |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁當前第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁
TE
CH
tm
Burst Length and Sequence
(Burst of Two)
Starting Address
(column address A0 binary)
0
1
(Burst of Four)
Starting Address
(column address A1-A0 binary)
00
01
10
11
(Burst of Eight)
Starting Address
(column address A2-A0 binary)
000
001
010
011
100
101
110
111
Preliminary T4312816A
TM Technology Inc. reserves the right
P.11
to change products or specifications without notice.
Publication Date:APR. 2003
Revision: 0.B
Sequential Addressing
Sequence (decimal)
0,1
1,0
Interleave Addressing
Sequence (Decimal)
0,1
1,0
Sequential Addressing
Sequence (decimal)
0,1,2,3
1,2,3,0
2,3,0,1
3,0,1,2
Interleave Addressing
Sequence (Decimal)
0,1,2,3
1,0,3,2
2,3,0,1
3,2,1,0
Sequential Addressing
Sequence (decimal)
0,1,2,3,4,5,6,7
1,2,3,4,5,6,7,0
2,3,4,5,6,7,0,1
3,4,5,6,7,0,1,2
4,5,6,7,0,1,2,3
5,6,7,0,1,2,3,4
6,7,0,1,2,3,4,5
7,0,1,2,3,4,5,6
Interleave Addressing
Sequence (Decimal)
0,1,2,3,4,5,6,7
1,0,3,2,5,4,7,6
2,3,0,1,6,7,4,5
3,2,1,0,7,6,5,4
5,4,7,6,1,0,3,2
6,7,4,5,2,3,0,1
7,6,5,4,3,2,1,0
Full page burst is an extension of the above tables of Sequential Addressing, with the length being 512 for
8Mx16 divice.
POWER UP SEQUENCE
1. Apply power and start clock, attempt to maintain CKE = ‘H’ , L(U)DQM = ‘H’ and the other pin are NOP
condition at the inputs.
2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us.
3. Issue precharge commands for all banks of the devices.
4. Issue 2 or more auto-refresh commands.
5. Issue mode register set command to initalize the mode register.
Cf.) Sequence of 4 & 5 is regardless of the order.
相關PDF資料 |
PDF描述 |
|---|---|
| T4312816B | 8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM |
| T4312816B-6S | 8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM |
| T4312816B-6SG | 8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM |
| T4312816B-7S | 8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM |
| T4312816B-7SG | 8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T4312816B | 制造商:TMT 制造商全稱:TMT 功能描述:8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM |
| T4312816B-6S | 制造商:TMT 制造商全稱:TMT 功能描述:8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM |
| T4312816B-6SG | 制造商:TMT 制造商全稱:TMT 功能描述:8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM |
| T4312816B-7S | 制造商:TMT 制造商全稱:TMT 功能描述:8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM |
| T4312816B-7SG | 制造商:TMT 制造商全稱:TMT 功能描述:8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。