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參數(shù)資料
| 型號： | T35L6464A |
| 廠商： | TM Technology, Inc. |
| 英文描述： | 64K x 64 SRAM |
| 中文描述： | 64K的× 64的SRAM |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 160K |
| 代理商： | T35L6464A |
TE
CH
tm
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED
OPERATING CONDITIONS
(0
°
C
≤
T
A
≤
70
°
C; Vcc = + 3.3V +10%/-5% unless otherwise noted)
T35L6464A
Taiwan Memory Technology, Inc. reserves the right
P. 8
to change products or specifications without notice.
Publication Date: AUG. 1998
Revision: E
M A X
DESCRIPTION
Power Supply
Current:
Operating
CONDITIONS
Device selected; all inputs
≤
VIL or
≥
VIH; cycle time
≥
tKC MIN; VCC = MAX;
outputs open
Device selected;
ADSC
,
ADSP
,
ADV
,
GW
,
BWE
≥
VIH; all other inputs
≤
VIL
or
≥
VIH; VCC = MAX; cycle
time
≥
tKC MIN: outputs open
Device deselected; VCC =
MAX; all inputs
≤
VSS + 0.2
or
≥
VCC - 0.2; all inputs
static; CLK frequency = 0
Device deselected; all inputs
≤
VIL or
≥
VIH; all inputs
static; VCC = MAX;
CLK frequency = 0
Device deselected; all inputs
≤
VIL or
≥
VIH; VCC = MAX;
CLK cycle time
≥
tKCMIN
SYM. TYP
Icc
-5
300
-6
260 240 210
-7
-8 UNITS NOTES
mA
200
3, 12, 13
Power Supply
Current: Idle
ISB1
30
60
55
50
45
mA
12, 13
2
15
CMOS Standby
ISB2
ISB3
10
40
10
40
10
40
10
40
mA
mA
12, 13
12, 13
TTL Standby
Clock Running
ISB4
30
81
76
66
51
mA
12, 13
CAPACITANCE
DESCRIPTION
Input Capacitance
Input/ Output
Capacitance(DQ)
CONDITIONS
TA = 25
°
C; f = 1 MHz
VCC = 3.3V
SYM.
CI
CO
TYP
3
6
MAX
4
7
UNITS
pF
pF
NOTES
4
4
THERMAL CONSIDERATION
DESCRIPTION
Thermal Resistance - Junction to
Ambient
Thermal Resistance - Junction to
Case
CONDITIONS
Still air, soldered on
4.25x
1.125 inch 4-layer PCB
SYM. QFP TYP UNITS
Θ
JA
20
NOTES
°
C/W
Θ
JB
1
°
C/W
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