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參數(shù)資料
| 型號： | T2800D |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | Silicon Bidirectional Thyristors |
| 中文描述： | 400 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB |
| 封裝： | CASE 221A-07, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 64K |
| 代理商： | T2800D |
T2800D
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
TL
2.2
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
260
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TC = 25
°
C
TC = 100
°
C
IDRM,
IRRM
—
—
—
—
10
2.0
μ
A
mA
ON CHARACTERISTICS
Peak On-State Voltage(1)
(IT =
30 A Peak)
VTM
—
1.7
2.0
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
IGT
—
—
—
—
10
20
15
30
25
60
25
60
mA
Gate Trigger Voltage (Continuous dc) (All Quadrants)
(VD = 12 Vdc, RL = 100 Ohms)
VGT
—
1.25
2.5
Volts
Gate Non–Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ohms, TC = 100
°
C)
VGD
0.2
—
—
Volts
Holding Current
(VD = 12 Vdc, Initiating Current =
200 mA, Gate Open)
IH
—
15
30
mA
Gate Controlled Turn-On Time
(VD = Rated VDRM, IT = 10 A, IGT = 80 mA, Rise Time = 0.1
μ
s)
DYNAMIC CHARACTERISTICS
tgt
—
1.6
—
μ
s
Critical Rate-of-Rise of Commutation Voltage
(VD = Rated VDRM, IT(RMS) = 8 A, Commutating di/dt = 4.1 A/ms,
Gate Unenergized, TC = 80
°
C)
dv/dt(c)
—
10
—
V/
μ
s
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise,
Gate Open, TC = 100
°
C)
(1) Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
dv/dt
60
—
—
V/
μ
s
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| T4100M | SILICON BIDIRECTIOANAL TRIODE THYRISTORS |
| T4110M | TERMINAL BLOCK TEST PLUG IEC +OPTIONS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T2800D_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Bidirectional Thyristors |
| T2800DG | 功能描述:雙向可控硅 THY SPECIAL TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| T2800DG | 制造商:ON Semiconductor 功能描述:Triac |
| T2800E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|500V V(DRM)|8A I(T)RMS|TO-220 |
| T2800M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|600V V(DRM)|8A I(T)RMS|TO-220 |
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