參數(shù)資料
型號(hào): T15M256A
廠商: TM Technology, Inc.
英文描述: 32K X 8 LOW POWER CMOS STATIC RAM
中文描述: 32K的× 8低功耗CMOS靜態(tài)RAM
文件頁數(shù): 4/10頁
文件大小: 82K
代理商: T15M256A
TE
CH
tm
AC CHARACTERISTICS
(
Vcc
=5V
±
5%, Vss = 0V, Ta = 0 to 70
°
C)
(1) READ CYCLE
T15M256A
Taiwan Memory Technology, Inc. reserves the right
P. 4
to change products or specifications without notice.
Publication Date: APR. 2001
Revision:C
T15M256A-35
MIN.
35
-
-
-
3
0
-
-
3
T15M256A-70
MIN.
70
-
-
-
3
0
-
-
3
PARAMETER
SYM.
MAX.
-
35
35
25
-
-
25
25
-
MAX.
-
70
70
35
-
-
35
35
-
UNIT
Read Cycle Time
t
RC
t
AA
t
ACS
t
AOE
t
CLZ*
t
OLZ
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Selection to Output in Low Z
Output Enable to Output in Low Z
Chip Deselection to Output in High Z
t
CHZ*
Output Disable to Output in High Z
t
OHZ
t
OH
Output Hold from Address Change
* These parameters are sampled but not 100% tested.
(2)WRITE CYCLE
T15M256A-35
MIN.
35
30
30
0
25
0
20
0
-
-
0
T15M256A-70
MIN.
70
60
60
0
50
0
30
0
-
-
0
PARAMETER
SYM.
MAX.
-
-
-
-
-
-
-
-
10
10
-
MAX.
-
-
-
-
-
-
-
-
25
25
-
UNIT
Write Cycle Time
t
WC
t
CW
t
AW
t
AS
t
WP
t
WR
t
DW
t
DH
t
WHZ
t
OHZ
t
OW
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Selection to End of Write
Address Valid to End of Write
Address Setup Time
Write Pulse Width
Write Recovery Time
Data Valid to End of Write
Data Hold from End of Write
Write to Output in High Z
Output Disable to Output in High Z
Output Active from End of Write
* These parameters are sampled but not 100% tested.
相關(guān)PDF資料
PDF描述
T15M256A-35J 32K X 8 LOW POWER CMOS STATIC RAM
T15M256A-70D 32K X 8 LOW POWER CMOS STATIC RAM
T15M256A-70P 32K X 8 LOW POWER CMOS STATIC RAM
T15M256B-70DG 32K X 8 LOW POWER CMOS STATIC RAM
T15M256B 32K X 8 LOW POWER CMOS STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
T15M256A-35J 制造商:TMT 制造商全稱:TMT 功能描述:32K X 8 LOW POWER CMOS STATIC RAM
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