參數(shù)資料
型號: T15L256A-35J
廠商: TM Technology, Inc.
英文描述: 32K X 8 LOW POWER CMOS STATIC RAM
中文描述: 32K的× 8低功耗CMOS靜態(tài)RAM
文件頁數(shù): 3/10頁
文件大?。?/td> 83K
代理商: T15L256A-35J
TE
CH
tm
CAPACITANCE
T15L256A
Taiwan Memory Technology, Inc. reserves the right
P. 3
to change products or specifications without notice.
Publication Date: APR. 2001
Revision:C
(Vcc = 3.3V, Ta = 25
°
C, f = 1 MHz)
PARAMETER
SYMBOL
C
IN
C
I/O
CONDITION
V
IN
= 0V
V
OUT
= 0V
MAX.
6
8
UNIT
pF
pF
Input Capacitance
Input/ Output Capacitance
Note:
These parameters are sampled but not 100% tested.
AC TEST CONDITIONS
PARAMETER
CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Level
Output Load
0V to 3V
3 ns
1.5V
C
L
=30pF,
I
OH
/
I
OL
= -4mA/8mA
AC TEST LOADS AND WAVEFORM
R1 320 ohm
3.3V
OUTPUT
30pF
Including
Jig and
Scope
R2
350 ohm
R1 320 ohm
3.3V
OUTPUT
5pF
Including
Jig and
Scope
R2
350
ohm
3.0V
0 V
90%
90%
10%
10%
3ns
3ns
(For T
CLZ
, T
OLZ
, T
CHZ
, T
OHZ
, T
WHZ
, T
OW
)
DQ
Fig.1
Z0 = 50 ohm
50 ohm
30 pF
Vt =1.5V
DQ
Fig.3
Z0 = 50
ohm
50
ohm
5 pF
Vt =1.5V
Fig.2
Fig.4
Fig.5
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