- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383873 > T0220 (International Rectifier) Fit Rate / Equivalent Device Hours PDF資料下載
參數(shù)資料
| 型號(hào)： | T0220 |
| 廠商： | International Rectifier |
| 英文描述： | Fit Rate / Equivalent Device Hours |
| 中文描述： | FIT率/等效器件小時(shí) |
| 文件頁數(shù)： | 7/35頁 |
| 文件大?。?/td> | 112K |
| 代理商： | T0220 |
第1頁第2頁第3頁第4頁第5頁第6頁當(dāng)前第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁
The IGBT Structure
IR
G
4
B
C
4
0
S
D
Diode
International Rectifier
Speed Designator
S Standard
F Fast
M Short Cicuit Fast
U UltraFast
K Short Circuit UltraFast
IGBT
Generation
Modifier
Die Size
Voltage Designator
C 600v E 800v
F 900v G 1000v
H 1200v
Package Designator
B T0220
P T0247
Basic IGBT Structure
The silicon cross-section of an Insulated Gate Bipolar Transistor (IGBT), the
terminal called Collector is, actually, the Emitter of the PNP. In spite of its
similarity to the cross-section of a power MOSFET, operating of the two
transistors is fundamentally different, the IGBT being a minority carrier device.
Except for the P + substrate is virtually identical to that of a power MOSFET,
both devices share a similar polysilicon gate structure and P wells with N +
source contacts. In both devices the N-type material under the P wells is sized
in thickness and reistivity to sustain the full voltage rating of the device.
However, in spite of the many similarities, he physical operation of the IGBT is
closer to that of a bipolar transistor than to that of a power MOSFET. This is
due to the P + substrate which is responsible for the minority carrier injection
into the N regtion and the resulting conductivity modulation, a significant share
of the conduction losses occur in the N region, typically 70% in a 500v device.
The part number itself contains in coded form the key features of the IGBT. An
explanation of the nomenclature in contained below.
IGBT / CoPack
Quarterly Reliability Report
Page 7 of 35
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| T0247 | Fit Rate / Equivalent Device Hours |
| T1070HV | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| T1074HV | BOX EXTRUD ALUM 8.66X6.30X1.20,1 |
| T10A100 | MICROMATE FEMALE PCB EDGEMT. RoHS Compliant: Yes |
| T10A200 | RF Coaxial Connector Adapter; Body Material:Brass; Body Style:Straight Bulkhead Adapter, Jack-Jack; Impedance:50ohm; Leaded Process Compatible:Yes; Series:N; Contact Termination:Clamp/Solder; Frequency Max:11GHz RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| T0220 1 | 制造商:CK tools 功能描述:CLAMP SIZE 1 |
| T0220 2 | 制造商:CK tools 功能描述:CLAMP SIZE 2 |
| T0220 3 | 制造商:CK tools 功能描述:CLAMP SIZE 3 |
| T0-22-040 | 制造商:Bivar 功能描述: |
| T0-220-68 | 制造商:Richco 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。