參數(shù)資料
型號: SZMMBZ15VALT1
廠商: ON SEMICONDUCTOR
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236
封裝: PLASTIC, CASE 318-08, 3 PIN
文件頁數(shù): 5/7頁
文件大?。?/td> 150K
代理商: SZMMBZ15VALT1
MMBZ5V6ALT1 Series
http://onsemi.com
5
TYPICAL CHARACTERISTICS
0.1
1
10
100
1000
1
10
100
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
MMBZ5V6ALT1
Figure 6. Pulse Waveform
VALUE
(%)
100
50
0
01
2
3
4
t, TIME (ms)
Figure 7. Pulse Derating Curve
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IPP.
HALF VALUE
IPP
2
tP
tr ≤ 10 ms
PEAK VALUE IPP
100
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
200
TA, AMBIENT TEMPERATURE (°C)
Figure 8. Maximum Nonrepetitive Surge
Power, Ppk versus PW
Figure 9. Maximum Nonrepetitive Surge
Power, Ppk(NOM) versus PW
0.1
1
10
100
1000
1
10
100
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25°C
BIDIRECTIONAL
MMBZ5V6ALT1
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
PEAK
PULSE
DERA
TING
IN
%
OF
PEAK
POWER
OR
CURRENT
@
T
A
=
25
°C
P
pk
,PEAK
SURGE
POWER
(W)
P
pk
,PEAK
SURGE
POWER
(W)
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