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參數(shù)資料
| 型號： | SXTA92 |
| 廠商： | SIEMENS A G |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP Silicon High Voltage Transistors |
| 中文描述： | 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 138K |
| 代理商： | SXTA92 |
Semiconductor Group
2
SXTA 92
SXTA 93
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
V
Collector-emitter breakdown voltage
I
C
= 1 mA
SXTA 92
SXTA 93
V
(BR)CE0
300
200
–
–
–
–
nA
nA
μ
A
μ
A
nA
Collector-base cutoff current
V
CB
= 200 V,
I
E
= 0
V
CB
= 160 V,
I
E
= 0
V
CB
= 200 V,
I
E
= 0,
T
A
= 125 C
V
CB
= 160 V,
I
E
= 0,
T
A
= 125 C
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
SXTA 92
SXTA 93
SXTA 92
SXTA 93
I
CB0
–
–
–
–
–
–
–
–
–
–
250
250
20
20
100
Unit
Values
typ.
Parameter
Symbol
min.
max.
DC characteristics
Emitter-base breakdown voltage
I
E
= 100
μ
A
V
(BR)EB0
5
–
–
V
Collector-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
SXTA 92
SXTA 93
V
CEsat
–
–
–
–
–
–
0.5
0.4
0.9
–
DC current gain
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 30 mA,
V
CE
= 10 V
SXTA 92
SXTA 93
h
FE
25
40
25
25
–
–
–
–
–
–
–
–
MHz
Transition frequency
I
C
= 10 mA,
V
CE
= 20 V,
f
= 100 MHz
Output capacitance
V
CB
= 20 V,
f
= 1 MHz
f
T
50
–
–
AC characteristics
pF
SXTA 92
SXTA 93
C
obo
–
–
–
–
6
8
Collector-base breakdown voltage
I
C
= 100
μ
A
SXTA 92
SXTA 93
V
(BR)CB0
300
200
–
–
–
–
I
EB0
Base-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
V
BEsat
1)
Pulse test conditions:
t
≤
300
μ
s,
D
≤
2 %.
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參數(shù)描述 |
|---|---|
| SXTA92TA | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| SXUV100 | 制造商:Opto Diode Corp 功能描述:SENSOR ELECTRON DETECTION 10MM |
| SXUV20HS1 | 制造商:OPTODIODE 制造商全稱:OPTODIODE 功能描述:PHOTODIODE 05 mm |
| SXUV300C | 制造商:Opto Diode Corp 功能描述:PHOTODIODE 331MM |
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