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Matc hed GaAs S PDT S witc h, DC - 3
GHz with T T L/CMOS Control Input
S
CR-9
V 3.00
Features
I
Integral TTL Driver
I
Low DC Power Consumption
I
Fast Switching Speed: 7 ns Typical
I
Surface Mount Package
I
50 Ohm Nominal Impedance
I
MIL-STD-883 Screening Available
Description
M/A-COM’s SW-313 is a GaAs FET SPDT absorptive
switch with integral silicon ASIC driver. Packaged in a
16-lead ceramic surface mount package, this device offers
excellent performance and repeatability from DC to 3 GHz
while maintaining low power consumption. The SW-313 is
ideally suited for use where fast speed, low power
consumption and broadband applications are required.
MIL-STD-883 screening available.
Electrical Specifications
1,2
(From –55°C to +85°C)
Parameter
Test Conditions
Frequency
Units
Min
Typ
Max
Insertion Loss
—
DC - 3000 MHz
DC - 2000 MHz
DC - 1000 MHz
DC - 500 MHz
dB
dB
dB
dB
—
—
—
—
—
—
—
—
1.2
1.1
0.9
0.8
VSWR
—
DC - 3000 MHz
DC - 2000 MHz
DC - 1000 MHz
DC - 500 MHz
Ratio
Ratio
Ratio
Ratio
—
—
—
—
—
—
—
—
1.4:1
1.35:1
1.35:1
1.3:1
Isolation
—
DC - 3000 MHz
DC - 2000 MHz
DC - 1000 MHz
DC - 500 MHz
dB
dB
dB
dB
35
45
50
55
—
—
—
—
—
—
—
—
Trise, Tfall
10% to 90%
—
ns
—
7
—
Ton, Toff
1.3V CTL to 90% / 10%
—
ns
—
18
—
Transients
In-Band
—
mV
—
25
—
1 dB Compression
Input Power
0.05 GHz
0.5 GHz to 3 GHz
dBm
dBm
—
—
+25
+30
—
—
IP2
Two-Tone Input Power up to +5 dBm
0.05 GHz
0.5 GHz to 3 GHz
dBm
dBm
—
—
+60
+65
—
—
IP3
Two-Tone Input Power up to +5 dBm
0.05 GHz
0.5 GHz to 3 GHz
dBm
dBm
—
—
+40
+46
—
—
Vin Low
0V to 0.8V
—
μA
—
—
1
Vin High
2.0V to 5.0V
—
μA
—
—
1
1. All specifications apply when operated with bias voltages of +5V for Vcc and –5V for Vee.
2. When DC blocks are used, a 10K ohm return to GND is required on the RFC port.