參數(shù)資料
型號(hào): SW313
英文描述: Matched GaAs SPDT Switch, DC - 3 GHz with TTL/CMOS Control Input
中文描述: 匹配砷化鎵單刀雙擲開(kāi)關(guān),直流- 3 GHz的具有TTL / CMOS控制輸入
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 220K
代理商: SW313
Matc hed GaAs S PDT S witc h, DC - 3
GHz with T T L/CMOS Control Input
S
CR-9
V 3.00
Features
I
Integral TTL Driver
I
Low DC Power Consumption
I
Fast Switching Speed: 7 ns Typical
I
Surface Mount Package
I
50 Ohm Nominal Impedance
I
MIL-STD-883 Screening Available
Description
M/A-COM’s SW-313 is a GaAs FET SPDT absorptive
switch with integral silicon ASIC driver. Packaged in a
16-lead ceramic surface mount package, this device offers
excellent performance and repeatability from DC to 3 GHz
while maintaining low power consumption. The SW-313 is
ideally suited for use where fast speed, low power
consumption and broadband applications are required.
MIL-STD-883 screening available.
Electrical Specifications
1,2
(From –55°C to +85°C)
Parameter
Test Conditions
Frequency
Units
Min
Typ
Max
Insertion Loss
DC - 3000 MHz
DC - 2000 MHz
DC - 1000 MHz
DC - 500 MHz
dB
dB
dB
dB
1.2
1.1
0.9
0.8
VSWR
DC - 3000 MHz
DC - 2000 MHz
DC - 1000 MHz
DC - 500 MHz
Ratio
Ratio
Ratio
Ratio
1.4:1
1.35:1
1.35:1
1.3:1
Isolation
DC - 3000 MHz
DC - 2000 MHz
DC - 1000 MHz
DC - 500 MHz
dB
dB
dB
dB
35
45
50
55
Trise, Tfall
10% to 90%
ns
7
Ton, Toff
1.3V CTL to 90% / 10%
ns
18
Transients
In-Band
mV
25
1 dB Compression
Input Power
0.05 GHz
0.5 GHz to 3 GHz
dBm
dBm
+25
+30
IP2
Two-Tone Input Power up to +5 dBm
0.05 GHz
0.5 GHz to 3 GHz
dBm
dBm
+60
+65
IP3
Two-Tone Input Power up to +5 dBm
0.05 GHz
0.5 GHz to 3 GHz
dBm
dBm
+40
+46
Vin Low
0V to 0.8V
μA
1
Vin High
2.0V to 5.0V
μA
1
1. All specifications apply when operated with bias voltages of +5V for Vcc and –5V for Vee.
2. When DC blocks are used, a 10K ohm return to GND is required on the RFC port.
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