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參數(shù)資料
| 型號： | SVD102 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | X Band VCO, PLO Hyperabrupt Junction Type GaAs Varactor Diode(X頻帶VCO，PLO結(jié)型砷化鎵變?nèi)荻O管) |
| 中文描述： | X波段的VCO，解放軍Hyperabrupt聯(lián)合型砷化鎵變?nèi)荻O管（X頻帶的VCO，解放軍結(jié)型砷化鎵變?nèi)荻O管） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 70K |
| 代理商： | SVD102 |
SVD102
No.5767-2/2
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property lose.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of September, 1997. Specifications and information herein are
subject to change without notice.
1
10
0.1
1.0
10.0
Vbi=1.0V
Cj — Vr + Vbi
–50
–25
Ambient Temperature, Ta – °C
0
25
50
75
100
–6
–4
–2
0
2
4
6
δ
Cj — Ta
Vr=1V
10V
5V
3V
15V
1V
f=1MHz
J
C
δ
C
Reverse Voltage, Vr + Diffusion potential, Vbi – V
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