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參數(shù)資料
| 型號(hào)： | SUM70N03-09CP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運(yùn)算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 40K |
| 代理商： | SUM70N03-09CP |
SUM70N03-09CP
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71943
S-21647
—
Rev. B, 23-Sep-02
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 A
V
DS
= V
GS
, I
D
= 250 A
V
DS
= 0 V, V
GS
=
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 125 C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 C
V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, I
D
= 20 A
30
Gate Threshold Voltage
1.0
3.0
V
Gate-Body Leakage
20 V
100
nA
1
Zero Gate Voltage Drain Current
I
DSS
250
A
On-State Drain Current
b
I
D(on)
100
A
0.0076
0.0095
0.015
0.014
b
Drain-Source On-State Resistance
r
DS(on)
0.0115
Forward Transconductance
b
Dynamic
a
g
fs
20
S
Input Capacitance
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
2200
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
410
180
pF
Gate Resistance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
1.5
31
7.5
5.0
9
80
22
8
45
V
DS
= 15 V,
V
GS
= 10 V, I
D
= 50 A
nC
15
120
35
12
V
= 15 V, R
= 0.3
50 A, V
GEN
= 10 V, R
G
= 2.5
I
D
ns
Source-Drain Diode Ratings and Characteristic (T
C
= 25 C)
Pulsed Current
Diode Forward Voltage
b
I
SM
V
SD
t
rr
100
A
I
F
= 50 A, V
GS
= 0 V
I
F
= 50 A, di/dt = 100 A/ s
1.2
1.5
V
Source-Drain Reverse Recovery Time
35
70
ns
Notes
a.
b.
c.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
Independent of operating temperature.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
30
60
90
120
0
2
4
6
8
10
0
30
60
90
120
0
1
2
3
4
5
6
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
V
GS
- Gate-to-Source Voltage (V)
-
I
25 C
-55 C
5 V
T
C
= 125 C
V
GS
= 10 thru 6 V
3 V
4 V
2 V
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