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參數(shù)資料
| 型號： | SUL32-AL |
| 廠商： | 美麗微半導體有限公司 |
| 英文描述： | Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| 中文描述： | 低VF肖特基二極管芯片-硅外延式龍門 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 76K |
| 代理商： | SUL32-AL |
SUL32-A
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of ML-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECDO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
(V)
(V)
(V)
(V)
(
o
C)
SUL32-A
SK34
20
14
20
0.34
-55 to +125
SYMBOLS
MARKING
CODE
Operating
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.2
I
O
3.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
30
A
V
R
= V
RRM
T
A
= 25
o
C
2.0
mA
V
R
= V
RRM
T
A
= 100
o
C
20
mA
Thermal resistance
Junction to ambient
R
q
JA
50
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
130
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Silicon epitaxial planer type
Formosa MS
Low VF Chip Schottky Barrier Diodes
0.185(4.8)
0.173(4.4)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.165(4.2)
0.150(3.8)
0.067(1.7)
0.060(1.5)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMA
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相關代理商/技術參數(shù) |
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|---|---|
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