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參數(shù)資料
| 型號(hào)： | STW8NK80Z |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 800V - 1.3ohm - 6.2A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| 中文描述： | N溝道800V的- 1.3ohm - 6.2A TO-220/TO-220FP/TO-247齊保護(hù)的SuperMESH⑩功率MOSFET |
| 文件頁(yè)數(shù)： | 2/11頁(yè) |
| 文件大?。?/td> | 472K |
| 代理商： | STW8NK80Z |
STP8NK80Z - STP8NK80ZFP - STW8NK80Z
2/11
ABSOLUTE MAXIMUM RATINGS
Symbol
( ) Pulse width limited by safe operating area
(1) I
SD
≤
6.2A, di/dt
≤
200 A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25°C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
STP8NK80Z - STW8NK80Z
STP8NK80ZFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
800
V
800
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
6.2
6.2 (*)
A
3.9
3.9 (*)
A
Drain Current (pulsed)
24.8
24.8 (*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5 K
)
Peak Diode Recovery voltage slope
140
30
W
1.12
0.24
W/°C
V
ESD(G-S)
dv/dt (1)
V
ISO
T
j
T
stg
4000
V
4.5
V/ns
Insulation Withstand Voltage (DC)
-
2500
V
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
TO-220
0.89
TO-220FP
4.2
TO-247
0.89
50
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
°C/W
62.5
°C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
°C
Parameter
Max Value
6.2
Unit
A
300
mJ
Parameter
Test Conditions
Igs=± 1 mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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