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參數資料
| 型號： | STW8NC90Z |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 900V - 1.1 ohm - 7.6A TO-247 Zener-Protected PowerMESH⑩III MOSFET |
| 中文描述： | N溝道900V - 1.1歐姆- 7.6A至247齊納保護PowerMESH⑩三MOSFET的 |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 251K |
| 代理商： | STW8NC90Z |
3/8
STW8NC90Z
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON (RESISTIVE LOAD)
Symbol
t
d(on)
Turn-on Delay Time
SWITCHING OFF (INDUCTIVE LOAD)
Symbol
t
r(Voff)
Off-voltage Rise Time
t
f
Fall Time
t
c
Cross-over Time
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
GATE-SOURCE ZENER DIODE
Symbol
Gate-Source Breakdown
Voltage
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3.
V
BV
=
α
T (25°-T) BV
GSO
(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Test Conditions
V
DD
= 450V, I
D
= 4A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
Min.
Typ.
Max.
Unit
36
ns
t
r
Rise Time
12
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
V
DD
= 720V, I
D
= 8 A,
V
GS
= 10V
73
102
nC
Gate-Source Charge
18
nC
Gate-Drain Charge
27
nC
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
DD
= 720V, I
D
= 8 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
36
ns
45
ns
77
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
7.6
A
Source-drain Current (pulsed)
30
A
Forward On Voltage
I
SD
= 7.6 A, V
GS
= 0
1.6
V
Reverse Recovery Time
I
SD
= 8 A, di/dt = 100A/μs,
V
DD
= 50V, T
j
= 150°C
(see test circuit, Figure 5)
860
ns
Reverse Recovery Charge
10
μC
Reverse Recovery Current
24
A
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Igs=± 1mA (Open Drain)
25
V
α
T
Voltage Thermal Coefficient
T=25°C Note(3)
1.3
10
-4
/°C
Rz
Dynamic Resistance
I
GS
= 50 mA
90
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相關代理商/技術參數 |
參數描述 |
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| STW8NK80Z | 功能描述:MOSFET N-Ch 800 Volt 6.2A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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