參數(shù)資料
型號(hào): STW47NM60
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 600V - 0.075ohm - 47A TO-247 MDmesh⑩Power MOSFET
中文描述: N溝道600V的- 0.075ohm - 47A條至247的MDmesh⑩功率MOSFET
文件頁數(shù): 3/6頁
文件大?。?/td> 117K
代理商: STW47NM60
3/6
STW47NM50
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
V
DD
= 250V, I
D
= 22.5 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
V
DD
= 400 V, I
D
= 45 A,
V
GS
= 10 V
Min.
Typ.
Max.
Unit
40
ns
t
r
Rise Time
35
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
87
117
nC
Gate-Source Charge
23
nC
Gate-Drain Charge
42
nC
Parameter
Test Conditions
V
DD
= 400 V, I
D
= 45 A,
R
G
= 4.7
,
V
GS
= 10 V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
18
ns
Fall Time
23
ns
Cross-over Time
44
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
45
A
Source-drain Current (pulsed)
180
A
Forward On Voltage
I
SD
= 45 A, V
GS
= 0
I
SD
= 40 A, di/dt = 100A/μs,
V
DD
= 100 V, T
j
= 25°C
(see test circuit, Figure 5)
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
520
7.8
30
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 40 A, di/dt = 100A/μs,
V
DD
= 100 V, T
j
= 150°C
(see test circuit, Figure 5)
680
11.2
33
ns
μC
A
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