參數(shù)資料
型號(hào)： STW45NM60
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 600V - 0.09ohm - 45A TO-247 MDmesh⑩Power MOSFET
中文描述： N溝道600V的- 0.09ohm - 45A條至247的MDmesh⑩功率MOSFET
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 256K
代理商： STW45NM60
3/8
STW45NM60
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
V
DD
= 250V, I
D
= 22.5A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 400V, I
D
= 45A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
30
ns
t
r
Rise Time
20
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
96
134
nC
Gate-Source Charge
31
nC
Gate-Drain Charge
43
nC
Parameter
Test Conditions
V
DD
= 400V, I
D
= 45A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
16
ns
Fall Time
23
ns
Cross-over Time
40
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
45
A
Source-drain Current (pulsed)
180
A
Forward On Voltage
I
SD
= 45A, V
GS
= 0
I
SD
= 45A, di/dt = 100A/μs,
V
DD
= 100 V, T
j
= 25°C
(see test circuit, Figure 5)
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
508
10
40
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 45A, di/dt = 100A/μs,
V
DD
= 100 V, T
j
= 150°C
(see test circuit, Figure 5)
650
14
43
ns
μC
A
Thermal Impedance
Safe Operating Area
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STW45NM60 制造商:STMicroelectronics 功能描述:MOSFET Transistor Transistor Polarity:N
STW46NF30 制造商:STMicroelectronics 功能描述:Trans MOSFET N-CH 300V 42A 3-Pin(3+Tab) TO-247 Tube 制造商:STMicroelectronics 功能描述:POWER MOSFET - Rail/Tube 制造商:STMicroelectronics 功能描述:MOSF N CH 300V 42A TO247 制造商:STMicroelectronics 功能描述:N-Ch 300 V 0.063 Ohm 42 A STripFET(TM)
STW47NM50 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 0.065ohm - 45A TO-247 MDmesh⑩Power MOSFET
STW47NM60 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.075ohm - 47A TO-247 MDmesh⑩Power MOSFET
STW47NM60ND 功能描述:MOSFET N-Ch 600V 0.075 Ohm 35A FDmesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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