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參數(shù)資料
| 型號： | STW18NK60Z |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 0.27з - 16A TO-247 Zener-Protected SuperMESH⑩ MOSFET |
| 中文描述： | N溝道600V的- 0.27з - 16A條，247齊納⑩MOSFET的保護SuperMESH |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 206K |
| 代理商： | STW18NK60Z |
3/9
STW18NK60Z
ELECTRICAL CHARACTERISTICS
(T
CASE
=25
°
C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125
°
C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 100 μA
R
DS(on)
Static Drain-source On
Resistance
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Test Conditions
I
D
= 1 mA, V
GS
= 0
Min.
600
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
50
μA
μA
V
GS
= ± 20V
±10
μA
3
3.75
4.5
V
V
GS
= 10V, I
D
= 8 A
0.27
0.36
Parameter
Test Conditions
V
DS
= 15 V
,
I
D
= 8 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
13
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
3540
370
80
pF
pF
pF
C
oss eq.
(3)
V
GS
= 0V, V
DS
= 0V to 420 V
220
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DD
= 300 V, I
D
= 8 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
34
25.5
82
47
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480 V, I
D
= 16 A,
V
GS
= 10V
106
21
55
170
nC
nC
nC
Parameter
Test Conditions
Min.
Typ.
Max.
16
64
Unit
A
A
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
I
SD
= 16 A, V
GS
= 0
I
SD
= 18 A, di/dt = 100A/μs
V
DD
= 100 V, T
j
= 25
°
C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
500
5.6
22.6
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 16 A, di/dt = 100A/μs
V
DD
= 100 V, T
j
= 150
°
C
(see test circuit, Figure 5)
650
8
24.2
ns
μC
A
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