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參數(shù)資料
| 型號(hào)： | STW10NC70Z |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 700V - 0.58 ohm - 10.6A TO-247 Zener-Protected PowerMESH⑩III MOSFET |
| 中文描述： | N溝道高達(dá)700V - 0.58歐姆- 10.6A至247齊納保護(hù)PowerMESH⑩三MOSFET的 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 249K |
| 代理商： | STW10NC70Z |
3/8
STW10NC70Z
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON (RESISTIVE LOAD)
Symbol
t
d(on)
Turn-on Delay Time
SWITCHING OFF (INDUCTIVE LOAD)
Symbol
t
r(Voff)
Off-voltage Rise Time
t
f
Fall Time
t
c
Cross-over Time
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
GATE-SOURCE ZENER DIODE
Symbol
Gate-Source Breakdown
Voltage
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3.
V
BV
=
α
T (25°-T) BV
GSO
(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Test Conditions
V
DD
= 350V, I
D
= 5.3A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 560V, I
D
= 10.6 A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
36
ns
t
r
Rise Time
12
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
72
100
nC
Gate-Source Charge
19
nC
Gate-Drain Charge
24
nC
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
DD
= 560V, I
D
= 10.6 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
36
ns
36
ns
77
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
10.6
A
Source-drain Current (pulsed)
42
A
Forward On Voltage
I
SD
= 10.6 A, V
GS
= 0
1.6
V
Reverse Recovery Time
I
SD
= 10.6 A, di/dt = 100A/μs,
V
DD
= 50V, T
j
= 150°C
(see test circuit, Figure 5)
660
ns
Reverse Recovery Charge
8.7
μC
Reverse Recovery Current
26
A
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Igs=± 1mA (Open Drain)
25
V
α
T
Voltage Thermal Coefficient
T=25°C Note(3)
1.3
10
-4
/°C
Rz
Dynamic Resistance
I
GS
= 50 mA
90
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