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參數(shù)資料
| 型號： | STV40NE03L-20 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 30V - 0.014ohm - 40A - PowerSO-10 STripFET MOSFET |
| 中文描述： | ? -通道30V的- 0.014ohm - 40A條- PowerSO - 10 STripFET MOSFET的 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 90K |
| 代理商： | STV40NE03L-20 |
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
1.88
62.5
0.5
300
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 15V)
40
A
E
AS
200
mJ
ELECTRICAL CHARACTERISTICS
(T
J
= -40to 150
o
C unless otherwisespecified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
μ
A
I
D
= 250
μ
A
V
DS
= Max Rating
V
DS
= Max Rating
V
GS
=
±
20 V
V
GS
= 0
V
GS
= 0
T
c
= 25
o
C
30
27
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
T
c
= 25
o
C
1
50
μ
A
μ
A
nA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
ON (
)
Symbol
Parameter
Test Conditions
I
D
= 250
μ
A T
c
= 25
o
C
I
D
= 250
μ
A
V
GS
= 10V
I
D
= 20 A
V
GS
= 5V
I
D
= 20 A
V
GS
= 10V
I
D
= 20 A
V
GS
= 5V
I
D
= 20 A
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
V
DS
= V
GS
1
0.6
1.8
2.5
3.0
V
V
R
DS(on)
Static Drain-source On
Resistance
T
c
= 25
o
C
T
c
= 25
o
C
0.014
0.02
0.023
0.04
0.046
A
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
20
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 20 A
10
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1850
450
160
2400
590
210
pF
pF
pF
STV40NE03L-20
2/8
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