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參數(shù)資料
| 型號： | STU7NB90I |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh⑩ MOSFET |
| 中文描述： | N溝道900V - 1.1歐姆- 7.3 Max220/Max220I PowerMesh⑩MOSFET的 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 403K |
| 代理商： | STU7NB90I |
3/9
STU7NB90 - STU7NB90I
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Parameter
Test Conditions
V
DD
= 450 V, I
D
= 3.5 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
V
DD
= 720V, I
D
= 7.4A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
Turn-on Delay Time
25
ns
t
r
Rise Time
12
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
51
72
nC
Gate-Source Charge
12.5
nC
Gate-Drain Charge
23.5
nC
Parameter
Test Conditions
V
DD
= 720V, I
D
= 7.4 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
22
ns
Fall Time
15
ns
Cross-over Time
31
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
7.3
A
Source-drain Current (pulsed)
29.2
A
Forward On Voltage
I
SD
= 7.3 A, V
GS
= 0
I
SD
= 7.4 A, di/dt = 100A/μs,
V
DD
= 100V, T
j
= 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
700
ns
Reverse Recovery Charge
6.3
μC
Reverse Recovery Current
18
A
Safe Operating Area for Max220I
Safe Operating Area for Max220
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