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參數(shù)資料
| 型號(hào)： | STU7NB90 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh⑩ MOSFET |
| 中文描述： | N溝道900V - 1.1歐姆- 7.3 Max220/Max220I PowerMesh⑩MOSFET的 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 403K |
| 代理商： | STU7NB90 |
STU7NB90 - STU7NB90I
2/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON (1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
Max220
0.734
Max220I
2.1
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
°C/W
°C/W
62.5
Maximum Lead Temperature For Soldering Purpose
300
°C
Parameter
Max Value
7.3
Unit
A
600
mJ
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
900
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
μA
50
μA
V
GS
= ±30V
±100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10 V, I
D
= 4 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
2
3
4
V
Static Drain-source On
Resistance
1.1
1.45
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 4 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
8
Max.
Unit
S
Forward Transconductance
C
iss
C
oss
C
rss
Input Capacitance
2120
pF
Output Capacitance
225
pF
Reverse Transfer
Capacitance
23
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STU7NB90I | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh⑩ MOSFET |
| STU7NF25 | 制造商:STMicroelectronics 功能描述:MOSFET N-CH 250V IPAK |
| STU7NM60N | 功能描述:MOSFET N-Ch 600V 0.84 Ohm 5A 2nd Gen MDmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STU7NM60N-S-H | 制造商:STMicroelectronics 功能描述: |
| STU7NM62N-H | 制造商:STMicroelectronics 功能描述:N-channel 625 V, 5 A, 0.81 ?X, Short IPAK MDmesh II Power MOSFET |
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