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參數(shù)資料
| 型號(hào)： | STU7NB100 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 1000V - 1.2ohm - 7.3A - Max220 PowerMESH MOSFET |
| 中文描述： | ? -頻道1000V - 1.2ohm - 7.3A - Max220 PowerMESH MOSFET的 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | STU7NB100 |
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
0.78
62.5
0.5
300
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
7.3
A
E
AS
600
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A V
GS
= 0
1000
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating T
c
= 125
o
C
V
GS
=
±
30 V
1
50
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
On State Drain Current
V
DS
= V
GS
I
D
= 250
μ
A
3
4
5
V
R
DS(on)
V
GS
= 10 V I
D
= 4 A
1.2
1.5
I
D(on)
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
7.3
A
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 4 A
8.9
S
C
iss
C
oss
C
rss
V
DS
= 25 V f = 1 MHz V
GS
= 0
2900
275
27
pF
pF
pF
STU7NB100
2/5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STU7NB90 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh⑩ MOSFET |
| STU7NB90I | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh⑩ MOSFET |
| STU7NF25 | 制造商:STMicroelectronics 功能描述:MOSFET N-CH 250V IPAK |
| STU7NM60N | 功能描述:MOSFET N-Ch 600V 0.84 Ohm 5A 2nd Gen MDmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STU7NM60N-S-H | 制造商:STMicroelectronics 功能描述: |
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