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參數(shù)資料
| 型號(hào)： | STU16NB50I |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | TRANSISTOR MOSFET MAX-220 |
| 中文描述： | 晶體管MOSFET的最大- 220 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 49K |
| 代理商： | STU16NB50I |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 250 V
R
G
= 4.7
I
D
= 7.8 A
V
GS
= 10 V
30
15
42
21
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 400 V
I
D
=15.6 A V
GS
= 10 V
67
20
30
88
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 400 V
R
G
= 4.7
I
D
= 15.6 A
V
GS
= 10 V
20
15
35
26
21
49
ns
ns
ns
SOURCE DRAINDIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
15.6
62
A
A
V
SD
(
)
t
rr
I
SD
= 15.6 A
V
GS
= 0
1.6
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 15.6 A
V
DD
= 100 V
di/dt = 100 A/
μ
s
T
j
= 150
o
C
600
6.8
22.5
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STU16NB50
3/6
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