參數(shù)資料
型號: STTA812D
廠商: 意法半導體
英文描述: TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
中文描述: TURBOSWITCH超快速高壓二極管
文件頁數(shù): 3/10頁
文件大?。?/td> 91K
代理商: STTA812D
0
2
4
6
8
10
0
2
4
6
8
10
12
14
16
18
20
IF(av) (A)
P1(W)
δ
= 1
δ
= 0.5
δ
= 0.2
δ
= 0.1
Fig.1:
Conductionlossesversusaveragecurrent.
0.0
1.0
2.0
3.0
4.0
5.0
0.1
1.0
10.0
100.0
VFM(V)
IFM(A)
Tj=125
°
C
Fig. 2:
Forward voltage drop versus forward cur-
rent (maximumvalues).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
Single pulse
δ
= 0.1
δ
= 0.2
δ
= 0.5
Fig. 3:
Relative variation of thermal impedance
junctionto case versuspulse duration.
0
100
200
300
400
500
0
50
100
150
200
250
300
350
400
450
500
550
dIF/dt(A/
μ
s)
trr(ns)
VR=600V
Tj=125
°
C
IF=2*IF(av)
IF=0.5*IF(av)
IF=IF(av)
Fig. 5:
Reverse recovery time versus dI
F
/dt (90%
confidence).
0
100
200
300
400
500
0.80
1.00
1.20
1.40
S factor
VR=600V
IF<2*IF(av)
Tj=125
°
C
dIF/dt(A/
μ
s)
Fig.6:
Softnessfactor(tb/ta) versusdI
F
/dt(typical
values).
0
100
200
300
400
500
0
10
20
30
40
50
dIF/dt(A/
μ
s)
IRM(A)
VR=600V
Tj=125
°
C
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
Fig. 4:
dI
F
/dt (90%confidence).
Peak reverse recovery current versus
STTA812D/DI/G
3/10
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