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參數(shù)資料
| 型號(hào)： | STTA212S |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 整流器 |
| 英文描述： | 2 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, SMC, 2 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 181K |
| 代理商： | STTA212S |
TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 4A
SPECIFIC TO THE FOLLOWING OPERATIONS:
SNUBBING OR CLAMPING, DEMAGHETIZATION
AND RECTIFICATION
ULTRA-FAST AND SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
HIGH FREQUENCY OPERATION
HIGH REVERSE VOLTAGE CAPABILITY
FEATURES AND BENEFITS
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operations which require extremely
fast, soft and noise-free power diodes.
Due to their optimized switching performances
they aloso highly decrease power losses in any
associated
switching IGBT or MOSFET in all
"freewheel mode" operations and is particulary
suitable and efficient in motor control circuitries, or
in primary of SMPS as snubber, clamping or
demagnetizing diodes secondary of SMPS as high
voltage rectifier diodes. They are also suitable for
the secondary of SMPS as high voltage rectifier
diodes.
DESCRIPTION
IF(AV)
2A
VRRM
1200V
trr (typ)
65ns
VF (max)
1.5V
MAIN PRODUCT CHARACTERISTICS
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
1200
V
VRSM
Non repetitive peak reverse voltage
1200
V
IF(RMS)
RMS forward current
10
A
IFRM
Repetitive peak forward current
tp = 5
s F=5kHz square
20
A
IFSM
Surge non repetitive forward current
tp = 10ms sinusoidal
25
A
Tstg
Storage temperature range
- 65 to + 150
°C
Tj
Maximum operating junction temperature
125
°C
ABSOLUTE RATINGS (limiting values)
STTA212S
TURBOSWITCH
ULTRA-FAST HIGH VOLTAGE DIODE
SMC
1/8
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