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參數(shù)資料
| 型號： | STT818B |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR |
| 中文描述： | 高增益低電壓PNP功率晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 142K |
| 代理商： | STT818B |
THERMAL DATA
R
thj-amb (1)
(1) Package mounted on FR4 pcb 25mm x 25mm.
Thermal Resistance Junction-ambient Max
104.2
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= -30 V
V
CB
= -30 V T
C
= 125
o
C
-0.1
-20
μ
A
μ
A
μ
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
EB
= -5 V
-0.1
I
C
= -10 mA
-30
V
I
C
= -0.5 A I
B
= -5 mA
I
C
= -2 A I
B
= -20 mA
I
C
= -1.2 A I
B
= -20 mA
-0.075
-0.21
-0.15
-0.5
-0.25
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= -0.5 A I
B
= -5 mA
I
C
= -1.2 A I
B
= -20 mA
I
C
= -2 A I
B
= -20 mA
-0.74
-1.1
-1.1
-1.2
V
V
V
V
BE(ON)
h
FE
Base-Emitter Voltage
I
C
= -0.5 A V
CE
= -2 V
-0.71
-1.1
V
DC Current Gain
I
C
= -0.5 A V
CE
= -1 V
I
C
= -2.5 A V
CE
= -3 V
100
100
* Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %.
Safe Operating Area
Derating Curve
STT818B
2/5
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