參數(shù)資料
型號(hào)： STSJ18NF3LL
廠商： 意法半導(dǎo)體
英文描述： LOW GATE CHARGE STripFET II POWER MOSFET
中文描述： 低柵極電荷STripFET二功率MOSFET
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 212K
代理商： STSJ18NF3LL
1/9
March 2005
STSJ18NF3LL
N-CHANNEL 30V - 0.016
- 18A PowerSO-8
LOW GATE CHARGE STripFET II POWER MOSFET
Rev.
1.0
Figure 1:
Package
Table 1: General Features
■
TYPICAL R
DS
(on) = 0.016
@ 10V
■
TYPICAL Q
g
= 12.5 nC @ 4.5 V
■
CONDUCTION LOSSES REDUCED
■
SWITCHING LOSSES REDUCED
■
IMPROVED JUNCTION-CASE THERMAL
RESISTANCE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
Size” strip-based process. This silicon, housed
in thermally improved SO-8 package, exhibits
optimal on-resistance versus gate charge trade-
off plus lower R
thj-c.
“Single
Feature
APPLICATIONS
■
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PC
S
TYPE
V
DSS
R
DS(on)
I
D
STSJ18NF3LL
30 V
<0.019
18 A
PowerSO-8
Figure 2: Internal Schematic Diagram
DRAIN CONTACT ALSO ON THE BACKSIDE
Table 2:
Order Codes
SALES TYPE
STSJ18NF3LL
Table 3:
ABSOLUTE MAXIMUM RATING
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C (*)
I
D
Drain Current (continuous) at T
C
= 100°C(*)
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Total Dissipation at T
C
= 25°C (#)
(
)
Pulse width limited by safe operating area.
(*) Value limited by wires bonding
MARKING
18F3LL)
PACKAGE
PowerSO-8
PACKAGING
TAPE & REEL
Parameter
Value
30
30
± 16
18
18
72
70
3
Unit
V
V
V
A
A
A
W
W
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