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參數(shù)資料
| 型號： | STS4NM20N |
| 英文描述： | N-CHANNEL 200V 0.11 OHM 4A SO-8 ULTRA LOW GATE CHARGE MDMESH II MOSFET |
| 中文描述： | N溝道200伏0.11歐姆4A條的SO - 8超低柵極電荷的MDmesh MOSFET的二 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 138K |
| 代理商： | STS4NM20N |
STS4NM20N
2/6
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
I
DM
(2)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor (1)
d
v
/d
t
(3)
Peak Diode Recovery voltage slope
THERMAL DATA
Rthj-pcb
T
j
T
stg
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 35 V)
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
R
DS(on)
Static Drain-source On
Resistance
Parameter
Value
Unit
200
V
200
V
± 30
V
4
2.83
A
A
16
A
2.5
W
0.02
W/°C
10
V/ns
Thermal Resistance Junction-pcb Max (1)
50
°C/W
Max. Operating Junction Temperature
150
°C
Storage Temperature
-55 to 150
°C
Parameter
Max Value
TBD
Unit
A
TBD
mJ
Test Conditions
I
D
= 1 mA, V
GS
= 0
Min.
200
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
10
μA
μA
V
GS
= ± 30 V
100
μA
3.5
4.2
5
V
V
GS
= 10 V, I
D
= 2 A
0.11
0.13
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