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參數(shù)資料
| 型號： | STQ2HNK60ZR-AP |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V - 4.4ヘ - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH MOSFET |
| 中文描述： | N溝道600V的- 4.4ヘ- 2.0安培TO-92/TO-220FP/IPAK齊納MOSFET的保護SuperMESH |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 405K |
| 代理商： | STQ2HNK60ZR-AP |
STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1
2/12
ABSOLUTE MAXIMUM RATINGS
Symbol
( ) Pulse width limited by safe operating area
(1) I
SD
≤
2 A, di/dt
≤
200 A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Current Limited by package
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device
’
s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device
’
s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
TO-220FP
Unit
IPAK
TO-92
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
600
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25
°
C
Drain Current (continuous) at T
C
= 100
°
C
2.0
2.0 (*)
0.5
A
1.26
1.26 (*)
0.32
A
Drain Current (pulsed)
8
8 (*)
2
A
Total Dissipation at T
C
= 25
°
C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
45
20
3
W
0.36
0.16
0.025
W/
°
C
V
ESD(G-S)
dv/dt (1)
V
ISO
T
j
T
stg
2000
V
4.5
V/ns
Insulation Withstand Voltage (DC)
--
2500
--
V
Operating Junction Temperature
Storage Temperature
-55 to 150
°
C
IPAK
2.77
100
--
300
TO-220FP
6.25
62.5
--
300
TO-92
--
120
40
260
Rthj-case
Rthj-amb
Rthj-lead
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
Maximum Lead Temperature For Soldering
Purpose
°
C/W
°
C/W
°
C/W
°
C
Parameter
Max Value
2
Unit
A
120
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
相關PDF資料 |
PDF描述 |
|---|---|
| STF2HNK60Z | N-CHANNEL 600V - 4.4ヘ - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH MOSFET |
| STD2NA50 | Supercapacitor; Capacitance:0.047F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:120ohm; Lead Pitch:5mm; Operating Temp. Max:70 C RoHS Compliant: Yes |
| STD2NA60 | Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:30ohm; Lead Pitch:20mm; Operating Temp. Max:70 C RoHS Compliant: Yes |
| STD2NB80T4 | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 1.9A I(D) | TO-252AA |
| STD2NB80 | N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
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| STQ2N62K3-AP | 功能描述:MOSFET N-Ch 620V 2.95 Ohm 2.2A SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STQ2NF06L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 60V - 0.1 W - 2A TO-92 STripFET⑩ II POWER MOSFET |
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