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參數(shù)資料
| 型號(hào)： | STQ1NC60R-AP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運(yùn)算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 106K |
| 代理商： | STQ1NC60R-AP |
1/7
PRELIMINARY DATA
April 2002
STQ1NC60
N-CHANNEL 600V - 12
- 0.3A TO-92
PowerMesh
II MOSFET
n
TYPICAL R
DS
(on) = 12
n
EXTREMELY HIGH dv/dt CAPABILITY
n
100% AVALANCHE TESTED
n
NEW HIGH VOLTAGE BENCHMARK
n
GATE CHARGE MINIMIZED
n
ADD SUFFIX “-AP” FOR ORDERING IN
AMMOPAK
DESCRIPTION
Using the latest high voltage MESH OVERLAY
II
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprietaryedge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
n
SWITCH MODE LOW POWER SUPPIES
(SMPS)
n
BATTERY CHARGER
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25
°
C
I
D
Drain Current (continuos) at T
C
= 100
°
C
I
DM
(
l
)
Drain Current (pulsed)
Total Dissipation at T
C
= 25
°
C
(
)Pulse width limitedby safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STQ1NC60
600 V
< 15
0.38 A
Parameter
Value
Unit
600
V
600
V
±
30
V
0.38
A
0.24
A
1.52
A
P
TOT
3.1
W
Derating Factor
0.028
W/
°
C
V/ns
°
C
°
C
dv/dt(1)
Peak Diode Recovery voltage slope
3
T
stg
Storage Temperature
–65 to 150
T
j
Max. Operating Junction Temperature
150
(1)I
SD
≤
0.3 A, di/dt
≤
100A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
TO-92
TO-92 (Ammopack)
INTERNAL SCHEMATIC DIAGRAM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STQ1NE10L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.3ヘ - 1A - TO-92 STripFET⑩ Power MOSFET |
| STQ1NE10L_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.3ヘ - 1A - TO-92 STripFET⑩ Power MOSFET |
| STQ1NE10L-AP | 制造商:STMicroelectronics 功能描述:STQ1NE10L Series N-Channel 100 V 0.4 Ohm STripFET Power MOSFET - TO-92 |
| STQ1NK60ZR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET |
| STQ1NK60ZR-AP | 功能描述:MOSFET N-CH 600V 0.3A TO-92 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:SuperMESH™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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