參數(shù)資料
型號(hào)： STQ1HNC60
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 600V - 7ohm - 0.4A TO-92 PowerMesh⑩II MOSFET
中文描述： N溝道600V的- 7ohm - 0.4A至- 92 PowerMesh第二MOSFET的⑩
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 116K
代理商： STQ1HNC60
3/6
STQ1HNC60
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Parameter
Test Conditions
V
DD
= 300V, I
D
= 0.7 A
R
G
= 4.7
, V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 480V, I
D
= 1.4 A,
V
GS
= 10V, R
G
= 4.7
Min.
Typ.
Max.
Unit
Turn-on Delay Time
Rise Time
8
ns
t
r
8
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
8.5
11.5
nC
Gate-Source Charge
2.8
nC
Gate-Drain Charge
2.8
nC
Parameter
Test Conditions
V
DD
= 480 V, I
D
= 1.4 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
25
ns
Fall Time
9
ns
Cross-over Time
34
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
0.4
A
Source-drain Current (pulsed)
1.6
A
Forward On Voltage
I
SD
= 0.4 A, V
GS
= 0
I
SD
= 1.4 A, di/dt = 100A/μs,
V
DD
= 100V, T
j
= 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
500
ns
Reverse Recovery Charge
950
μ
C
Reverse Recovery Current
3.8
A
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