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參數(shù)資料
| 型號： | STPS20S100C |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | POWER SCHOTTKY RECTIFIER |
| 中文描述： | 功率肖特基整流器 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 90K |
| 代理商： | STPS20S100C |
STPS20S100C
2/7
Table 3: Absolute Ratings
(limiting values, per diode)
Table 4: Thermal Resistance
Table 5: Static Electrical Characteristics
(per diode)
Pulse test:
* tp = 5 ms,
δ
< 2%
** tp = 380 μs,
δ
< 2%
To evaluate the conduction losses use the following equation: P = 0.62 x I
F(AV)
+ 0.009 I
F2(RMS)
Symbol
V
RRM
I
F(RMS)
Parameter
Value
100
Unit
V
Repetitive peak reverse voltage
RMS forward voltage
30
A
I
F(AV)
Average forward current
δ
= 0.5
TO-220AB /
I
2
PAK
T
c
= 150°C
Per diode
Per device
Per diode
Per device
10
20
10
20
180
A
TO-220FPAC
T
c
= 140°C
I
FSM
P
ARM
T
stg
T
j
dV/dt
Surge non repetitive forward current
t
p
= 10ms sinusoidal
t
p
= 1μs T
j
= 25°C
A
Repetitive peak avalanche power
7200
W
Storage temperature range
-65 to + 175
°C
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
175
10000
°C
V/μs
* :
thermal runaway condition for a diode on its own heatsink
Symbol
Parameter
Value
2.2
1.3
0.3
4.5
3.5
2.5
Unit
R
th(j-c)
Junction to case
TO-220AB / I
2
PAK
Per diode
Total
Coupling
Per diode
Total
Coupling
°C/W
R
th(c)
R
th(j-c)
Junction to case
TO-220FPAB
°C/W
R
th(c)
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Symbol
Parameter
Tests conditions
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Min.
Typ
Max.
3.5
Unit
μA
I
R
*
Reverse leakage current
V
R
= V
RRM
1.3
4.5
mA
V
F
**
Forward voltage drop
I
F
= 5A
0.73
V
0.57
0.61
I
F
= 10A
0.85
0.66
0.71
I
F
= 20A
0.94
0.74
0.80
---------------
dTj
(
----------1
a
–
)
>
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