參數(shù)資料
型號(hào)： STP7NB60FP
廠商： 意法半導(dǎo)體
英文描述： N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
中文描述： ? -通道增強(qiáng)型MOSFET的PowerMESH
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 115K
代理商： STP7NB60FP
THERMAL DATA
TO-220
TO220-FP
R
thj-case
Thermal Resistance Junction-case
Max
1.0
3.13
o
C/W
o
C/W
o
C/W
o
C
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Typ
62.5
0.5
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
7.2
A
E
AS
580
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwisespecified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A
V
GS
= 0
600
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 125
o
C
1
50
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30 V
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
On State Drain Current
I
D
= 250
μ
A
I
D
= 3.6 A
3
4
5
V
R
DS(on)
V
GS
= 10V
1.0
1.2
I
D(on)
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
7.2
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 3.6 A
4
5.3
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1250
165
16
1625
223
22
pF
pF
pF
STP7NB60/FP
2/9
相關(guān)PDF資料
PDF描述
STP80NE03L TERMINAL
STP80NE06-10 CAPACITOR, CASE C, 68UF, 6.3V; Application:Solid; Capacitance:68uF; Tolerance, capacitance:20%; Series:NOS; Voltage, rating:6.3V; Capacitor dielectric type:Niobium Oxide; Case style:C; Depth, external:2.6mm; Length / Height, RoHS Compliant: Yes
STP80NF55-07 N-Channel 55V-0.0055Ω-80A- TO-220 STripFET Power MOSFET(N溝道功率MOSFET)
STPAC02F1 RF DETECTOR FOR POWER AMPLIFIER CONTROL WITH INTERNAL TEMPERATURE COMPENSATION IPADTM
STPR2420 ULTRA-FAST RECOVERY RECTIFIER DIODES
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STP7NB80 制造商:STMicroelectronics 功能描述:
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STP7NC40 功能描述:MOSFET N-Ch 400 Volt 7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP7NC70Z 功能描述:MOSFET TO-220AB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP7NC70ZFP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
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