參數(shù)資料
型號(hào)： STP75NE75FP
廠商： 意法半導(dǎo)體
英文描述： N - CHANNEL 75V - 0.01ohm - 75A TO-220/TO-220FP STripFET POWER MOSFET
中文描述： ? -通道75V的- 0.01ohm - 75A條TO-220/TO-220FP STripFET功率MOSFET
文件頁(yè)數(shù)： 3/9頁(yè)
文件大小： 106K
代理商： STP75NE75FP
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 40 V
R
G
= 4.7
(Resistive Load, see fig. 3)
V
DD
= 60 V I
D
= 75 A V
GS
= 10 V
I
D
= 40 A
V
GS
= 10 V
32
130
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
150
30
62
200
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 40 V
R
G
= 4.7
(Resistive Load, see fig. 3)
V
clamp
= 60 V
R
G
= 4.7
(Inductive Load, see fig. 5)
I
D
= 40 A
V
GS
= 10 V
150
45
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
I
D
= 75 A
V
GS
= 4.5 V
35
60
100
ns
ns
ns
SOURCE DRAINDIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
43
170
A
A
V
SD
(
)
t
rr
I
SD
= 75 A
I
SD
= 75 A
V
DD
= 30 V
(see test circuit, fig. 5)
V
GS
= 0
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
di/dt = 100 A/
μ
s
T
j
= 150
o
C
130
0.6
9
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
SafeOperating Area for TO-220
SafeOperating Area for TO-220FP
STP75NE75/FP
3/9
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STP80NE06-10 CAPACITOR, CASE C, 68UF, 6.3V; Application:Solid; Capacitance:68uF; Tolerance, capacitance:20%; Series:NOS; Voltage, rating:6.3V; Capacitor dielectric type:Niobium Oxide; Case style:C; Depth, external:2.6mm; Length / Height, RoHS Compliant: Yes
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