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參數(shù)資料
| 型號(hào)： | STP6NK90ZFP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 900V - 1.56ohm - 5.8A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH⑩Power MOSFET |
| 中文描述： | N溝道900V - 1.56ohm - 5.8A TO-220/TO-220FP/D2PAK齊保護(hù)的SuperMESH⑩功率MOSFET |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 588K |
| 代理商： | STP6NK90ZFP |
STP6NK90Z - STP6NK90ZFP - STB6NK90Z
2/12
ABSOLUTE MAXIMUM RATINGS
Symbol
( ) Pulse width limited by safe operating area
(1) I
SD
≤
5.8A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
STP6NK90Z / STB6NK90Z
STP6NK90ZFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
900
V
900
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
5.8
5.8 (*)
A
3.65
3.65 (*)
A
Drain Current (pulsed)
23.2
23.2 (*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
140
30
W
1.12
0.24
W/°C
V
ESD(G-S)
dv/dt (1)
Viso
T
j
T
stg
4000
V
4.5
V/ns
V
--
2500
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
TO-220
D
2
PAK
TO-220FP
Unit
Rthj-case
Rthj-pcb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
(When
mounted on minimum Footprint)
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering
Purpose
0.89
4.2
°C/W
°C/W
60
Rthj-amb
T
l
62.5
300
°C/W
°C
Parameter
Max Value
5.8
Unit
A
300
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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