參數(shù)資料
型號(hào): STP60N06-16
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 60A I(D) | TO-220
中文描述: 晶體管| MOSFET的| N溝道| 60V的五(巴西)直|第60A條(丁)|至220
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 108K
代理商: STP60N06-16
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 50 V
R
G
= 4.7
(Resistive Load, see fig. 3)
V
DD
= 80 V I
D
= 60 A V
GS
= 10 V
I
D
= 30 A
V
GS
= 10 V
28
100
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
142
27
59
185
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 50 V
R
G
= 4.7
(Resistive Load, see fig. 3)
V
clamp
= 80 V
R
G
=
4.7
(Inductive Load, see fig. 5)
I
D
= 30 A
V
GS
= 10 V
160
45
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
I
D
= 60 A
V
GS
= 10 V
40
45
85
ns
ns
ns
SOURCE DRAINDIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
60
240
A
A
V
SD
(
)
t
rr
I
SD
= 60 A
I
SD
= 60 A
V
DD
= 50 V
(see test circuit, fig. 5)
V
GS
= 0
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
di/dt = 100 A/
μ
s
T
j
= 150
o
C
170
1.02
12
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
SafeOperating Area for TO-220
SafeOperating Area for TO-220FP
STP60NE10/FP
3/9
相關(guān)PDF資料
PDF描述
STP60N06FI TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 32A I(D) | TO-220VAR
STP60NE10FP N - CHANNEL 100V - 0.016W - 60A TO-220/TO-220FP STripFET] POWER MOSFET
STP60NF06 N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET⑩ POWER MOSFET
STP60NF06FP N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220FP STripFET⑩ POWER MOSFET
STP60NF10 N-CHANNEL 100V - 0.019ohm - 80A D2PAK/TO-220 STripFET II POWER MOSFET
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