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參數(shù)資料
| 型號： | STP5NC70Z |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| 中文描述： | N溝道高達700V - 1.8ohm - 4.6a進入TO-220/FP/D巴基斯坦/我巴基斯坦齊保護的PowerMESH⑩三MOSFET的 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 348K |
| 代理商： | STP5NC70Z |
1/12
December 2002
STP5NC70Z - STP5NC70ZFP
STB5NC70Z - STB5NC70Z-1
N-CHANNEL 700V - 1.8
- 4.6A TO-220/FP/D2PAK/I2PAK
Zener-Protected PowerMESHIII MOSFET
I
TYPICAL R
DS
(on) = 1.8
I
EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
I
100% AVALANCHE TESTED
I
VERY LOW GATE INPUT RESISTANCE
I
GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
I
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
I
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
(1)Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP5NC70Z/FP
700V
< 2
4.6 A
STB5NC70Z/-1
700V
< 2
4.6 A
Parameter
Value
Unit
STP(B)5NC70Z(-1)
STP5NC70ZFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
700
V
700
V
Gate- source Voltage
± 25
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
4.6
4.6(*)
A
2.9
2.9(*)
A
Drain Current (pulsed)
18.4
18.4
A
Total Dissipation at T
C
= 25°C
Derating Factor
100
35
W
0.8
0.32
W/°C
I
GS
Gate-source Current
Gate source ESD(HBM-C=100pF, R=15K
)
Peak Diode Recovery voltage slope
± 50
mA
V
ESD(G-S)
dv/dt
V
ISO
T
stg
T
j
3
KV
3
V/ns
Insulation Winthstand Voltage (DC)
--
2000
V
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
150
°C
(
G
)I
SD
≤
4.5A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(*)
.
Limited only by maximum temperature allowed
TO-220
2
3
TO-220FP
123
I2PAK
(Tabless TO-220)
1
3
D2PAK
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB5NC70Z | N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| STB5NC70ZT4 | N-CHANNEL 700V 1.8 OHM 4.6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET |
| STB5NC70Z-1 | N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| STP5NC90ZFP | N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| STP5NC90Z | N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP5NC70ZFP | 制造商:STMicroelectronics 功能描述: |
| STP5NC90Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| STP5NC90ZFP | 制造商:STMicroelectronics 功能描述: |
| STP5NK100Z | 功能描述:MOSFET N-Ch 1000 Volt 3.5A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP5NK100Z_09 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3? Power MOSFET |
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