參數(shù)資料
型號(hào)： STP4NK80Z
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 800V - 3ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩ Power MOSFET
中文描述： N溝道800V的- 3ohm -第3A TO-220/TO-220FP/DPAK/IPAK齊保護(hù)的SuperMESH⑩功率MOSFET
文件頁(yè)數(shù)： 3/13頁(yè)
文件大?。?/td> 620K
代理商： STP4NK80Z
3/13
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 50 μA
R
DS(on)
Static Drain-source On
Resistance
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
SWITCHING ON
Symbol
t
d(on)
t
r
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Test Conditions
I
D
= 1 mA, V
GS
= 0
Min.
800
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
50
μA
μA
V
GS
= ± 30V
±10
μA
3
3.75
4.5
V
V
GS
= 10 V, I
D
= 1.5 A
3
3.5
Parameter
Test Conditions
V
DS
= 15 V
,
I
D
= 1.5 A
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
Min.
Typ.
2.9
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
575
67
13
pF
pF
pF
C
oss eq.
(3)
V
GS
= 0V, V
DS
= 0V to 400 V
60
pF
Parameter
Test Conditions
V
DD
= 400 V, I
D
= 1.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 640 V, I
D
= 3 A,
V
GS
= 10V
Min.
Typ.
13
12
Max.
Unit
ns
ns
Turn-on Delay Time
Rise Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
22.5
4.2
11.3
nC
nC
nC
Parameter
Test Conditions
V
DD
= 400 V, I
D
= 1.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 640 V, I
D
= 3 A,
R
G
= 4.7
,
V
GS
= 10 V
(Inductive Load see, Figure 5)
Min.
Typ.
35
32
Max.
Unit
ns
ns
Turn-off Delay Time
Fall Time
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
18
7.5
25
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
3
12
Unit
A
A
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
I
SD
= 3 A, V
GS
= 0
I
SD
= 3 A, di/dt = 100 A/μs
V
DD
= 80 V, T
j
= 150°C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
400
1520
7.6
ns
nC
A
相關(guān)PDF資料
PDF描述
STD4NK80Z N-CHANNEL 800V - 3ohm - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH⑩ Power MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STP4NK80Z 制造商:STMicroelectronics 功能描述:TRANSISTOR 制造商:STMicroelectronics 功能描述:N CHANNEL MOSFET, 800V, 3A, TO-220
STP4NK80Z_06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 800V - 3ヘ - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH⑩ MOSFET
STP4NK80ZFP 功能描述:MOSFET N-Ch, 800V-3ohms Zener SuperMESH 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP4NM60 功能描述:MOSFET N-Ch 600 Volt 3.0Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP4NM60_09 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh? Power MOSFET
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